TRANSISTOR MARKING P3 Search Results
TRANSISTOR MARKING P3 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR MARKING P3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SO692
Abstract: so692 equivalent SO642 transistor P39
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SO692 SO642 OT-23 SO692 so692 equivalent SO642 transistor P39 | |
transistor P39Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 |
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SO692 OT-23 SO642 OT-23 transistor P39 | |
transistor P39Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s |
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SO692 OT-23 SO642 OT-23 transistor P39 | |
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS |
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SO692 OT-23 SO642 OT-23 | |
transistor P39
Abstract: small signal pnp SO642 SO692 4032C OC310
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SO692 OT-23 SO642 OT-23 transistor P39 small signal pnp SO642 SO692 4032C OC310 | |
transistor P39Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB |
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SO692 SO642 OT-23 transistor P39 | |
transistor P39
Abstract: SO642 SO692 4032C
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SO692 OT-23 SO642 OT-23 -300icroelectronics. transistor P39 SO642 SO692 4032C | |
S0692Contextual Info: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER |
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S0692 S0642 OT-23 SC06810 OT-23 S0692 | |
sot-23 marking code T25
Abstract: 400V 100MA NPN SOT23 marking C3Z
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CMPTA44 OT-23 26-September OT-23 sot-23 marking code T25 400V 100MA NPN SOT23 marking C3Z | |
bft93
Abstract: transistor BF 199
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BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199 | |
Contextual Info: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration |
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BFT92W Q62702-F1681 OT-323 900MHz | |
Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
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Q62702-F1489 OT-323 Q122QS3 900MHz | |
Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code |
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900MHz OT-343 BFP182W Q62702-F1502 | |
Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs |
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Q62702-F1611 OT-143 900MHz | |
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BFR183WContextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code |
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Q62702-F1493 OT-323 900MHz BFR183W | |
Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
OCR Scan |
BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05 | |
b10nContextual Info: UM B10N I M B 1 OA Transistor, digitai, dual, PNP, with 2 resistors Dimensions Units : mm Features available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB10N and IMB10A; B10 UMB10N (UMT6) I t . 3 2 : 0. 1 I 0.65 I package contains two independent |
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SC-74) UMB10N IMB10A; DTA123JKA) SC-70) SC-59) UMB10N IMB10A -100nA UMB10N, b10n | |
S3V 05Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3 |
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3SK240 S3V 05 | |
P3596
Abstract: P3596L UTC P3596L UTC P3596 P3596-ADJ P3596ADJ P3596L-xx-TQ5-T utcp3596 p3596-l adj p3596 converter
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P3596 150KHZ, O-220B P3596 O-220-5 O-263-5 P3596L P3596-xx-TA5-T P3596L-xx-TA5-T P3596-xx-TB5-T P3596L UTC P3596L UTC P3596 P3596-ADJ P3596ADJ P3596L-xx-TQ5-T utcp3596 p3596-l adj p3596 converter | |
P3576Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P3576 LINEAR INTEGRATED CIRCUIT 50KHz, 2A PWM BUCK DC/DC CONVERTER DESCRIPTION The UTC P3576 series is a step-down switching regulator which is able to provide 2A output current. The available versions of output voltage are 2.5V, 3.3V, 5V, 12V and adjustable. |
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P3576 50KHz, P3576 P3576G-xx-S08-R QW-R103-054 | |
082-K
Abstract: tsd135 24v to 5V 2A SW regulator
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P3576 50KHz, P3576 P3576L-xx-S08-R P3576G-xx-S08-R P3576L-xx-S08-T P3576G-xx-S08-T QW-R103-054 082-K tsd135 24v to 5V 2A SW regulator | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P3576 LINEAR INTEGRATED CIRCUIT 50KHz, 2A PWM BUCK DC/DC CONVERTER DESCRIPTION The UTC P3576 series is a step-down switching regulator which is able to provide 2A output current. The available versions of output voltage are 2.5V, 3.3V, 5V, 12V and adjustable. |
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P3576 50KHz, P3576 P3576L-xx-S08-R P3576G-xx-S08-R P3576L-xx-S08-T P3576G-xx-S08-T QW-R103-054 | |
24v to 5V 2A SW regulator
Abstract: 5v to 25V 2A SW regulator 12v 12v 2A regulator circuit diagram TSD135
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P3576 50KHz, P3576 P3576L-xx-S08-R P3576G-xx-S08-R P3576L-xx-S08-T P3576G-xx-S08-T QW-R103-054 24v to 5V 2A SW regulator 5v to 25V 2A SW regulator 12v 12v 2A regulator circuit diagram TSD135 | |
Marking G1sContextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF |
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bbS3131 BF992R OT143R Marking G1s |