TRANSISTOR MARKING TE SOT363 Search Results

LT 816

Contextual Info: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification

Contextual Info: DISCRETE SEMICONDUCTORS PUMH1 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 12 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 06 PHILIPS PHILIPS Philips Semiconductors Product specification

RQ TRANSISTOR

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity

MARKING CODE ht9

Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Contextual Info: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2

PUMT1

Contextual Info: Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES PUMT1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.

HT1 SOT363

Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design

Contextual Info: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1998 Aug 10 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives

MMDT4403

Abstract: transistor c 2026 TRANSISTOR m3a
Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives

TRANSISTOR MARKING TE SOT363

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • / 

BC857BS SOT363

Contextual Info: DISCRETE SEMICONDUCTORS BC857BS PNP general purpose double transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jul 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

TRANSISTOR MARKING TE SOT363

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-363 Unit：inch mm • PNP epitaxial silicon, planar design 0.087(2.20) 0.074(1.90) • Collector-emitter voltage V CE = -40V 0.010(0.25) 0.087(2.20) 0.078(2.00)

PHILIPS MARKING CODE AY SOT363

Contextual Info: DISCRETE SEMICONDUCTORS PUMH1 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

MMDT4401

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

MARKING 46n SOT-363

Abstract: BC846APN
Contextual Info: BC846APN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) • Collector-emitter voltage V CE =40V 0.010(0.25) • Collector current I C = 600mA • / 

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

PUMX1

Abstract: marking code IC .ztz
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose double transistor

AN 6752

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PUMB4 PNP resistor-equipped double transistors 1998 Aug 03 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors

Marking Code 13t

Abstract: MARKING CODE 13t sot363 PHILIPS MARKING CODE AY SOT363
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC847BPN NPN/PNP general purpose transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor

Contextual Info: MMDT3906 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 200 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current I C = -200mA • In compliance with EU RoHS 2002/95/EC directives