TRANSISTOR MARKING UE Search Results

transistor EKs

Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Contextual Info: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

2SD2460

Abstract: 2SD24
Contextual Info: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification M Di ain sc te on na tin nc ue e/ d Unit: mm marking • Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit 20 V 20 V 15 V 1.5 A 0.7 A 300 mW 150 ˚C

Contextual Info: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking

marking code SG transistors

Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier

IC 7107

Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
Contextual Info: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05

2SD1512

Contextual Info: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Ta=25˚C Parameter Symbol Ratings Unit 100 V 100 V 15 V 50 mA 20

hl 4929

Abstract: 34T sot-363 ATIC 164 D2 48 pin
Contextual Info: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC

Contextual Info: S IE M E N S NPN Silicon A F and Switching Transistor BCX 41 B SS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

Contextual Info: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features marking Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • M edium freq uency applications in th ick and thin film

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING • Low cu rrent max. 30 mA PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r M edium freq uency applications in th ick and thin-film

3 pin mini mold transistor

Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
Contextual Info: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2

2SB1537

Abstract: 2SD2357 2sb15
Contextual Info: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .

Contextual Info: Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 0.95 3 +0.1 1.9±0.2 0.65±0.15 +0.1 0.16 –0.06 2 Ta=25˚C 0.8 0.1 to 0.3 0.4±0.2 Parameter

Contextual Info: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and

transistor marking 1f

Abstract: 2SC4543
Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings *2 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 0.4max. +0.25 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .

2SC4755

Contextual Info: Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 2.1±0.1 Unit 25 V 20 V VCES Emitter to base voltage VEBO Peak collector current ICP Collector current IC Collector power dissipation

2SD602

Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage

matsushita Transistor hFE CLASSIFICATION Marking

Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings

2SC4782

Contextual Info: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .

Panasonic MARKING chart

Contextual Info: Panasonic Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor T ri Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For am plification of low freq ue n cy output • Features • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half.