TRANSISTOR MARKING YB Search Results

sot marking code ZS

Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Contextual Info: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

q406 transistor

Abstract: nf 820 transistor q406 q406 transistor data
Contextual Info: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q

SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking

BFQ64

Contextual Info: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

smd marking code YBs SOT-23

Abstract: Q67041-S1417 marking YBS sot-23 smd marking code sot-23 infineon YBs sot-23 Q67041S1417 SMD MARKING QG 6 PIN
Contextual Info: BSS 84 P Final data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking

smd marking code ybs

Abstract: q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 BSS84P E6327 L6327 YBs 70
Contextual Info: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Ordering Code Marking BSS84P - E6327 PG-SOT-23

Q67041-S1417

Abstract: BSS 84 infineon
Contextual Info: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P

smd marking code YBs 14

Abstract: smd marking code ybs marking YBs
Contextual Info: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P

YB1220

Abstract: SOT-26T ic voltage regulator circuit diagram SOT-26M
Contextual Info: YB1220 Dual Channel 200mA LDO Regulator Description Features The YB1220 family is a dual-channel LDO product consisting of 2 independent low noise, low dropout LDO , linear regulators especially designed for battery-powered equipment and portable device.

YB1230

Abstract: RF transistor marking IN SOT-89 thermal sensor internal block diagram
Contextual Info: YB1230 600mA, Low-Noise LDO Regulator „ Description „ The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are

YB1231

Abstract: voltage regulator with current limiter with mosfet
Contextual Info: YB1231 HV600mA, Low-Noise LDO Regulator „ Description „ The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are

2sc3518

Abstract: c 3518 transistor mp
Contextual Info: :*A i à SH h t i SILICON TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S C 3518-Z is designed fo r A u d io Frequency A m p lifie r and PACKAGE DMENSIONS in millimeters S w itching, esp ecially in H ybrid Integrated Circuits. FEATURES

2815 voltage regulator

Abstract: 805 SOT-89 YB1230 voltage regulator with current limiter with mosfet voltage regulator 2805 transistor wireless sensor circuit diagram
Contextual Info: YB1230 – 600mA Low-Noise LDO Regulator Description Features The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are

YB1210R

Abstract: LDO SOT89 vin 30v RF transistor marking IN SOT-89
Contextual Info: YB1210R 300mA, Ultra-Low-Noise, High PSRR LDO Regulator „ Description „ The YB1210R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1210R regulators achieve a low 320mV dropout at 300mA load current of 3.3V

EFTEC-64T

Abstract: SC82 SC-82 YB1200R ldo regulator
Contextual Info: YB1200R 150mA High PSRR with Auto-Discharge LDO Regulator Features Description The YB1200R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1200R regulators achieve a low 180mV dropout at 150mA load current of 3.3V

YB1210R

Abstract: RF transistor marking IN SOT-89
Contextual Info: YB1210R 300mA, Ultra-Low-Noise, High PSRR LDO Regulator Features Description The YB1210R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1210R regulators achieve a low 320mV dropout at 300mA load current of 3.3V

YB1231

Abstract: RF transistor marking IN SOT-89
Contextual Info: YB1231 – HV600mA Low-Noise LDO Regulator Description Features The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are

YB1210

Contextual Info: YB1210 – 300mA Ultra-Low-Noise, High PSRR LDO Regulator Description Features The YB1210 family consists of a series of 300mA ultra-low-noise, low dropout LDO linear regulators especially designed for battery-powered RF and wireless applications. The YB1210 regulator