NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR
Contextual Info: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T

Contextual Info: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U

dc-ac converter royer

Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Contextual Info: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor

BUK202-50X

Abstract: PowerMOS transistor TOPFET high side switch BUK202
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

BUK202-S0Y

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

DFCA

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50Y C6560
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50X
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

BUK202-50Y

Abstract: PowerMOS transistor TOPFET high side switch
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

transistor irf510

Abstract: IRF510 IRF510 MOSFET IRF510N OA116 IRF-510 D84BL2 IRF511 MOSFET IRF510 CC174
Contextual Info: IRF510,511 D84BL2.K2 FU? HELD EFFECT POWER TRANSISTOR 4.0 AMPERES 100, 60 VOLTS FlDS ON = 0.6 n The IRF510,511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing G E’s advanced Power DMOS tech­ nology to achieve low on-resistance with excellent device

transistor KA 7808

Abstract: RF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

MRF148

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r­ cial and am ateur radio equipm ent to 1 75 MHz.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r s ta g e s up to 4 0 0 M H z range. • G u a ra n te e d 28 Volt, 150 M H z P e rfo rm a n ce

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

Contextual Info: r z 7 S C S -T H O M S O N ^7# « [im iO T to W S STTA12006T V 1/2 TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v > 2*60A V rrm 600V trr (typ) 45ns Vf (max) 3 3 K1 B A1 STTA12006T(V)1 1.5V K2 E A1 STTA12006T(V)2

Contextual Info: fZ 7 S G S -T H O M S O N Ä 7 # R K M i r a ï ï M O t g S S T T A 6 0 0 6 T V 1 12 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns V f (max) 1.5V K2 A2 K1 A1 STTA6006T(V)1

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: transistor C 2240
Contextual Info: STTA5012T V 1/2  TURBOS WITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

mosfet 1200V 40A

Abstract: smps 45 watts
Contextual Info: STTA9012T V 1/2  TURBOS WITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012T(V)1 STTA9012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as

STTA12006TV1

Abstract: STTA12006TV2 STTA6006P
Contextual Info: STTA6006P STTA12006TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:

L60A

Abstract: MOSFET 1200v 30a 400v philips
Contextual Info: STTA6006T V 1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 2*30A VRRM 600V trr (typ) 35ns VF (max) K2 A2 K1 A1 STTA6006T(V)1 1.5V A2 K1 K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode

MOSFET 600v 60a

Abstract: STTA12006TV1 diode ed 4c TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE STTA12006TV2 STTA6006P 2x60A
Contextual Info: STTA6006P STTA12006TV1/2  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:

STTA12006TV1

Abstract: STTA12006TV2 STTA6006P TRANSISTOR mosfet k2
Contextual Info: STTA6006P STTA12006TV1/2  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:

A6006

Contextual Info: rZ 7 ^7# SGS-THOMSON RiilDeæilLieTIfiiOlMDeg S T T A 6 0 0 6 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns E§3 BE A2 K1 A1 A2 K1 K2 A1 STTA6006T(V)1 1.5V V f (max)