TRANSISTOR MOSFET N-CH 30V Search Results

sop8901

Contextual Info: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.

MCH6935

Contextual Info: MCH6935 Ordering number : ENN8039 MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

pdf datasheet of ic 8038

Abstract: ic 8038 ic 8038 APPLICATIONS MCH6933
Contextual Info: MCH6933 Ordering number : ENN8038 MCH6933 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

MCH6931

Contextual Info: MCH6931 Ordering number : ENN8037 MCH6931 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

MCH6937

Contextual Info: MCH6937 Ordering number : ENN8040 MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

MCH6937

Contextual Info: MCH6937 Ordering number : EN8040A SANYO Semiconductors DATA SHEET MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

EN803

Abstract: EN8039A MCH6935
Contextual Info: MCH6935 Ordering number : EN8039A SANYO Semiconductors DATA SHEET MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density

VEC2901

Contextual Info: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP9972 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.

UP9972

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.

SMS6001

Abstract: MosFET
Contextual Info: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UM6K31N Preliminary Power MOSFET SI LI CON N -CH AN N EL M OSFET T RAN SI ST OR 5 4 ̈ 6 DESCRI PT I ON The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. ̈ ̈ 3 SOT-363

Contextual Info: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。

Contextual Info: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。

Contextual Info: コンプリメンタリーパワー MOSFET ELM34603AA-N •概要 ■特長 ELM34603AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A

Contextual Info: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は 低 入 力 容 N チャンネル P チャンネル 量 低電圧駆動、 低オン抵抗とい ・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A

Contextual Info: コンプリメンタリーパワー MOSFET ELM34604AA-N •概要 ■特長 ELM34604AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A

Contextual Info: コンプリメンタリーパワー MOSFET ELM35603KA-S •概要 ■特長 ELM35603KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=10A

N mosfet 400v 100A

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated

Contextual Info: コンプリメンタリーパワー MOSFET ELM35601KA-S •概要 ■特長 ELM35601KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS703 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS703 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: STD17NE03L N - CHANNEL 30V - 0.034£2 - 17A - DPAK _ STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 17N E 03L . . . . . . V dss R dS oii Id 30 V < 0.05 Q. 17 A TYPICAL RDs(on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C

Contextual Info: STB60NE03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

transistor DI 468 circuit diagram application

Abstract: SC06140 *P80NE STP80NE03L-06 *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220
Contextual Info: STP80NE03L-06 N - CHANNEL 30V - 0.005ft - 80A - TO-220 STripFET POWER MOSFET TYPE S TP 80N E 03L-06 • . . . . V R d ss 30 V d Id S o ii < 0.006 Q. 80 A TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C