TRANSISTOR MOSFET N-CH DRAIN CURRENT Search Results

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTN3055 Power MOSFET 1 2 A, 2 5 V N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UTN3055 is N-channel logic level enhancement mode field effect transistor. ̈ SY M BOL 2.Drain 1.Gate 3.Source ̈ ORDERI N G I N FORM AT I ON

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3055 Power MOSFET 1 2 A, 2 5 V N -CH AN N EL POWER M OSFET ̈ 1 DESCRI PT I ON TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. ̈ SY M BOL 2.Drain 1 TO-251 1.Gate 3.Source ̈ ORDERI N G I N FORM AT I ON

Contextual Info: MOTOROLA O rder this docum ent by M LD2N06CL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLD2N06CL is designed for applications that require a rugged power switching

fuel injector mosfet

Contextual Info: MOTOROLA Order this document by MLD1N06CL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLD1N06CL is designed for applications that require a rugged power switching

Contextual Info: MOTOROLA O rder this docum ent by M LP2N06CL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLP2N06CL is designed for applications that require a rugged power switching

Contextual Info: MOTOROLA O rd e r th is d o c u m e n t b y M LP1N06C L/D SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET These SM ARTD ISCR ETES devices feature current limiting for short circuit protection, an integral g a te -to -s o u rc e clamp for ESD protection and g a te -to -d ra in

Contextual Info: 5.1 Power MOS-FET Letter symbol Symbol Explanation Symbol Explanation Ciss Input capacitance td on Turn on delay time Coss O utput capacitance tr Rise time Crss Feedback capacitance ton Turn on time Id Drain current td(off) Turn o ff delay time Idp Drain current (pulse)

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
Contextual Info: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different

an913 Motorola

Abstract: AN913 TMOS POWER MOSFETs mosfet base inverter with chargers circuit MTM20N10 SN7407 CI sn74LS05 MTM8N10 TDT102 tl494 flyback MTM35N06
Contextual Info: g AN-913 MOTOROLA Semiconductor Products Inc. Application Note DESIGNING WITH TMOS POWER MOSFETs Prepared by Kim Gauen Applications Engineer The advent of vertical current control in MOS Field Effect Transistors has brought their design advan ­ ta g e s , w e ll k n o w n to IC a n d S m a ll S ig n a l circu it

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
Contextual Info: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different

MTP30N08M

Abstract: AN569 MC34129 sensefet high voltage current mirror mosfet current mirror 314B03
Contextual Info: M O T O R O L A SC X S T R S / R F b 3 b 7 2 5 4 □ Ü ‘iô7ô4 ôTl • MOTb bflE » MOTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor IM-Channel Enhancement-Mode Silico n Gate w ith Current Sensing Capability TM OS S E N S E F E T DEVICE

AN569

Abstract: MTDF1C02HD SMD310
Contextual Info: MOTOROLA Order this document by MTDF1C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS3652 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH  DESCRI PT I ON The UTC UPS3652 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with minimal external components. The UTC UPS3652 is designed to

Contextual Info: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without

TRANSISTOR REPLACEMENT GUIDE

Abstract: TRANSISTOR mos canal p HMA20 All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet
Contextual Info: MOSFET Analyser Model: HMA20 Operation E G AT RCE SO U AIN DR N EL HAN L N C ANNE P CH The HMA20 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any enhancement mode MOSFET. With a press of the button, the Analyser will:

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS602 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS602 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS704 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS704 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS603 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS603 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

UU105 transformer

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS604 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS604 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS703 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS703 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS601 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS601 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,

Contextual Info: MOTOROLA O rder this docum ent by M TP2N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP2N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

32n20

Abstract: 32N20E
Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTW32N20E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate