TRANSISTOR MOTOROLA 322 Search Results

transistor bd4202

Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

transistor mj 1503 motorola

Abstract: mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010
Contextual Info: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE53N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 53 AMPERES

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

Contextual Info: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com ­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

A 3131

Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Contextual Info: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

MRF285

Abstract: MRF2857
Contextual Info: 4bE 1> b3b 7 2 5 4 Q0c12ci l S T • flOTb 7ÏH6 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA k A á MRF2857HX, HXV NPN Silicon RF Small-Signal Transistor DMO lllllll Discrete Military Operation . . .designed for high-gain, low-noise amplifier, oscillator and mixer applications, and in

55n10

Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
Contextual Info: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MC2124

Abstract: MC2150
Contextual Info: mm dd INTEGRATED CIRCUITS FROM MOTOROLA 1 ! I DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50

fzh 141

Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
Contextual Info: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50

Contextual Info: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor

Contextual Info: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE53N50E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

MOTOROLA 2N6277

Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380
Contextual Info: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S | ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .

NI-360HF

Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from

zener z1

Abstract: 12 volt zener diode 10 watts j718
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MA8051CT-ND

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

MC2003

Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153
Contextual Info: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

NT 407 F MOSFET TRANSISTOR

Abstract: AN569 MTP29N15E SMD310
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: MTB29N15E SMD310 S 170 MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high