TRANSISTOR MOTOROLA T223 Search Results
TRANSISTOR MOTOROLA T223 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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| TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR MOTOROLA T223 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
sot-223 body marking D K Q FContextual Info: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol |
OCR Scan |
PZTA92T1/D PZTA92T1 OT-223 sot-223 body marking D K Q F | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value |
OCR Scan |
BSP16T1 OT-223 T-223 318E-04, O-261AA | |
step motor em 483Contextual Info: MOTOROLA Order this document by MTB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
MTB36N06V/D MTB36N06V step motor em 483 | |
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Contextual Info: MOTOROLA O rder this docum ent by M TB30P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount M TB30P06V Motorola Preferred Device TM OS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.080 OHM |
OCR Scan |
TB30P06V/D TB30P06V MTB30P06V/D | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD10N10EL TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM |
OCR Scan |
TD10N10EL/D MTD10N10EL MTD10N10EL/D | |
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Contextual Info: MOTOROLA O rder this docum ent by M TB23P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB23P06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 23 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
TB23P06V/D MTB23P06V MTB23P06V/D | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD5N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
TD5N25E/D TD5N25E MTD5N25E/D | |
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Contextual Info: MOTOROLA Order this document by MTB50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance |
OCR Scan |
MTB50N06VL/D MTB50N06VL | |
TB50nContextual Info: MOTOROLA Order this docum ent by M TB50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOSV™ Power Field Effect Transistor D2PAK for S urface Mount MTB50N06VL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance |
OCR Scan |
TB50N06VL/D MTB50N06VL/D TB50n | |
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Contextual Info: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance |
OCR Scan |
MTB52N06VL/D MTB52N06VL | |
06vlContextual Info: MOTOROLA Order this document by MTB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance |
OCR Scan |
MTB30N06VL/D TB30N06VL 06vl | |
TB50N06V
Abstract: ot 112 TB50n
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OCR Scan |
MTB50N06V/D TB50N06V TB50N06V ot 112 TB50n | |
CIL TRANSISTOR 188Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S V™ MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new technology designed to achieve an on-resistance |
OCR Scan |
MTB52N06V/D MTB52N06V CIL TRANSISTOR 188 | |
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Contextual Info: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV20N 50E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 20 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
MTV20N50E/D TV20N | |
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Contextual Info: MOTOROLA O rder this docum ent by M TV6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV6N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
TV6N100E/D MTV6N100E/D | |
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Contextual Info: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
TV10N100E/D TV10N MTV10N100E/D | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD15N06VL TMOS V™ Power Field Effect Transistor DPAK for S urface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
TD15N06VL/D TD15N06VL MTD15N06VL/D | |
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Contextual Info: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD3302 WaveFET TuT Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 10m Q TM05 WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s |
OCR Scan |
MTD3302/D MTD3302 | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD1P40E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor DPAK for S urface Mount P-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n |
OCR Scan |
TD1P40E/D MTD1P40E/D | |
05n60
Abstract: G05N60D
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OCR Scan |
05N60D/D 05n60 G05N60D | |
supper mosfets
Abstract: k 351 transistor
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OCR Scan |
MTD20N03HDUD 2PHX43416 MTD20N03HDL/D supper mosfets k 351 transistor | |
transistor z3m
Abstract: Z3M IC z3m Transistor Z3M Y
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OCR Scan |
MTB75N03HDL/D 2PHX43416-0 transistor z3m Z3M IC z3m Transistor Z3M Y | |
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Contextual Info: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20P03H DL HDTMOS E-FET™ High Density Pow er FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM |
OCR Scan |
MTD20P03HDL/D 2PHX43416-0 | |
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Contextual Info: MOTOROLA O rder this docum ent by M TB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50P03HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM |
OCR Scan |
TB50P03HDL/D MTB50P03HDL 418B-03 | |