TRANSISTOR MP 27 Search Results

TRANSISTOR MP 27 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MP 27 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D144 Abstract: D1447 2SK3402-Z 2SK3402 as89 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3402 TO-251 MP-3 2SK3402-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3402 2SK3402 O-251 2SK3402-Z O-252 O-251/TO-252 O-251) D144 D1447 2SK3402-Z as89	PDF
D1707 Abstract: 2SK3919 2SK3919 equivalent 2SK3919-ZK 2SK39 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3919 TO-251 MP-3 2SK3919-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching	Original	2SK3919 2SK3919 O-251 2SK3919-ZK O-252 O-251) D1707 2SK3919 equivalent 2SK3919-ZK 2SK39	PDF
2SK3634-Z Abstract: 2SK3634 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3634 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3634 TO-251 MP-3 2SK3634-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching	Original	2SK3634 2SK3634 O-251 2SK3634-Z O-252 O-251/TO-252 O-251) 2SK3634-Z	PDF
2SK3993 Abstract: 2SK3993-ZK Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3993 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3993 TO-251 MP-3 2SK3993-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching	Original	2SK3993 2SK3993 O-251 2SK3993-ZK O-252 O-251) 2SK3993-ZK	PDF
sd 431 transistor Abstract: 2sk3918 2SK3918-ZK D1707 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3918 TO-251 MP-3 2SK3918-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching	Original	2SK3918 2SK3918 O-251 2SK3918-ZK O-252 O-251) sd 431 transistor 2SK3918-ZK D1707	PDF
2sk3919 Abstract: 2SK3919 equivalent D1707 2SK3919-ZK pt136 2Sk3919 TRANSISTOR Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3919 TO-251 MP-3 2SK3919-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching	Original	2SK3919 2SK3919 O-251 2SK3919-ZK O-252 O-251) 2SK3919 equivalent D1707 2SK3919-ZK pt136 2Sk3919 TRANSISTOR	PDF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.	Original	NP36P06SLG NP36P06SLG O-252 O-252)	PDF
D18008 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.	Original	NP36P06SLG NP36P06SLG O-252 O-252) 175ntrol D18008	PDF
NP88N03KDG Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK	Original	NP88N03KDG NP88N03KDG O-263 MP-25ZK) O-263)	PDF
a2755 Abstract: NP88N04KUG Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP88N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N04KUG TO-263 MP-25ZK	Original	NP88N04KUG NP88N04KUG O-263 MP-25ZK) O-263) a2755	PDF
2SK3716 Abstract: 2SK3716-Z D1653 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3	Original	2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 2SK3716-Z D1653	PDF
2SK3716 Abstract: 2SK3716-Z Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER 2SK3716 designed for high current switching applications. 2SK3716-Z PACKAGE TO-251 MP-3	Original	2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 60ems, 2SK3716-Z	PDF
VK200-4B Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF161 150MHz 30MHz, 150MHz, MRF151 VK200-4B	PDF
UC3425 Abstract: transistor k 2723 IC 541 BSX49 IEC134 Contextual Info: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage	OCR Scan	711002b BSX49 7Z69420 UC3425 transistor k 2723 IC 541 IEC134	PDF

TRANSISTOR si 6822 Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822 Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to	OCR Scan	uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822	PDF
m-pulse tunnel diode Abstract: Mp2407 MP4033 MP2923 M-PULSE Contextual Info: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original		PDF
Contextual Info: HA12089NT/MP -Sound Signal Processing IC for Automatic Telephone Answering System The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering	OCR Scan	HA12089NT/MP HA12089 HA12089NT	PDF
transistor BD 512 Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern	OCR Scan	12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A	PDF
transistor 5bw Contextual Info: HA12089NT/MP-Sound Signal Processing IC for Automatic Telephone Answering System Description HA12089NT The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering	OCR Scan	HA12089NT/MP------------------------Sound HA12089NT HA12089 transistor 5bw	PDF
Contextual Info: MP MOTION SENSOR 2002.10.23 7:56 PM Page 2 MP Motion Sensor AMN1 MP MOTION SENSOR ‘ ’ MOTION SENSOR (PASSIVE INFRARED TYPE) NaPiOn web page URL: http://www.napion.com/ FEATURES Standard type Slight motion detection type 1. The world’s smallest with a built-in	Original	811inch. 874inch.	PDF
PIR motion sensor light wiring diagram Abstract: human detection sensors motion sensor wiring diagram pir motion sensor circuit design Infrared "human detection" sensor of 2m range AMN11112 mp motion sensor pir motion sensor human motion sensors motion sensors Contextual Info: MP MOTION SENSOR 2002.10.23 7:56 PM Page 2 MP Motion Sensor AMN1 MP MOTION SENSOR ‘ ’ MOTION SENSOR (PASSIVE INFRARED TYPE) NaPiOn web page URL: http://www.napion.com/ FEATURES Standard type Slight motion detection type 1. The world’s smallest with a built-in	Original		PDF
latest Infrared-Sensor for obstacle detection Abstract: human detection sensors circuit obstacle detection sensors for the blind Alcohol detection with vehicle controlling PIR based human motion DETECTOR CIRCUIT DIAGRAM human detection sensors infrared motion sensors motion detection sensors circuit using 555 timer PIR SENSOR IS MOTION SENSOR human detection sensor Contextual Info: feature 02.2.12 1:56 PM Page 8 1 What is a Motion Sensor? The motion sensor is an infrared human detection sensor, which, as opposed to factory automation sensors that are used with factory equipment, is designed to be incorporated into various devices that	Original		PDF
AMN11112 Abstract: PIR motion sensor light wiring diagram AMN12111 mp motion sensor AMN21111* datasheet infrared human motion detection sensor "PIR wiring diagram AMN11111 movement sensor pir direction human detection sensors Contextual Info: MP MOTION SENSOR 04.11.10 11:25 AM Page 11 MP Motion Sensor AMN1,2,4 MP MOTION SENSOR ‘ ’ MOTION SENSOR (PASSIVE INFRARED TYPE) Standard type Slight motion detection type 2. Dual lens colors (white and black) are provided With an ultrasmall design and dual lens	Original		PDF
d2494 Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493 Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in	Original	n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493	PDF

TRANSISTOR MP 27 Search Results

TRANSISTOR MP 27 Result Highlights (5)

TRANSISTOR MP 27 Datasheets Context Search

D144

D1707

2SK3634-Z

2SK3993

sd 431 transistor

2sk3919

D18008

NP88N03KDG

a2755

2SK3716

2SK3716

VK200-4B

UC3425

TRANSISTOR si 6822

m-pulse tunnel diode

transistor BD 512

transistor 5bw

PIR motion sensor light wiring diagram

latest Infrared-Sensor for obstacle detection

AMN11112

d2494