TRANSISTOR MP 37 Search Results

MP25 transistor

Abstract: 2SK2723 2SK1794 2SK2941 2SK2135 transistor 2sj449 MP45F 2SJ329 2SK1760 2SK3055
Contextual Info: Road map Transistor Package Power MOS FET Package – RDS(on) MAP Package Type RDS(on)MAX (Ω) VGS = 10 V TO-251/252 (MP-3) TO-126 (MP-5) MP-10 up to 34 m — — up to 140 m — TO-220AB/263 (MP-25) Isolated TO-220 (MP-45F) TO-3P (MP-88) up to 400 m —

2SK3365

Abstract: 2SK3365-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook

NP22N055SLE

Abstract: d1750 FIGURE17 A1523
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055SLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION NP22N055SLE is N-channel MOS Field Effect PART NUMBER PACKAGE NP22N055SLE TO-252 MP-3ZK Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

MP-25ZP

Abstract: NP90N04PUF V1435
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching PART NUMBER PACKAGE NP90N04PUF TO-263 MP-25ZP

d1740

Abstract: NP55N04SUG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

NP34N055SLE

Abstract: A1737
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055SLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP34N055SLE is N-channel MOS Field Effect PART NUMBER PACKAGE NP34N055SLE TO-252 MP-3ZK Transistor designed for high current switching applications.

d16861

Abstract: NP60N04KUG D1686
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG TO-263 MP-25ZK

NP82N04PUG

Abstract: NP82N04PUG1-E1B-AY nec 41-A MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP82N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP82N04PUG TO-263 MP-25ZP

2SK3813

Abstract: 2SK3813-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3

NP88N03KDG

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK

2SK3813-Z

Abstract: 2SK38 2SK3813 d1673
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3

D1717

Abstract: 2SK3902 2SK3902-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3902 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3902-ZK TO-263 MP-25ZK

2SK3430-ZK

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430-ZK SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3430-ZK is N-channel MOS Field Effect PART NUMBER PACKAGE 2SK3430-ZK TO-263 MP-25ZK Transistor designed for high current switching applications.

Contextual Info: NEC / EtfCTRON DEVICE SILICO N TR A N SISTO R / _ / 2SD992-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD992-Z is designed fo r Audio Frequency A m plifier and Switching, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS •

DIP44-pin

Abstract: ha1681
Contextual Info: HA16816NT/MP SLIC IC for Key Telephone Applications Features • Basic Functions: Internal battery feed control B , loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor • Ring trip detection

Contextual Info: VRF3933 VRF3933 MP 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

UC3425

Abstract: transistor k 2723 IC 541 BSX49 IEC134
Contextual Info: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage

Contextual Info: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz

MP transistor

Abstract: 2sd863 transistor 2sc4488 2SC4614 2sc4612
Contextual Info: 8A H Y O NMP New MP Transistor Series F e a t u i rr ee ss * Smal1-sized package containing the same chip that has been so far placed in the MP.TO-126 packages. * Small-sized making itu pu possible to make T uuiai X o i ¿/U U package u iai\ i 115 1 j j 1 u 1 1.

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

mp 1008

Abstract: SC33 629-633 Ahuja amplifier
Contextual Info: Copyright  1999 IEEE. Reprinted from: O. Khouri, R. Micheloni and G. Torelli, "Very fast recovery word-line voltage regulator for multilevel nonvolatile memories", Proc. Third IMACS/IEEE International Multiconference on Circuits, Systems, Communications and Computers CSCC , Athens (Greece), June 1999, pp. 3781-3784.

transistor p98

Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC