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    TRANSISTOR MW 131 Search Results

    TRANSISTOR MW 131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MW 131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5454

    Abstract: ic n 3856
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW


    Original     		PDF 2SC5454 2SC5454 ic n 3856

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D

    AN569

    Abstract: MMBT2131T1 MMBT2131T1G 318F
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D AN569 MMBT2131T1 MMBT2131T1G 318F

    2SC5752

    Abstract: 2SC5752-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


    Original     		PDF 2SC5752 2SC5752-T1 2SC5752 2SC5752-T1

    nec japan 7812

    Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF 2SC5750 2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751

    NSL12AW

    Abstract: NSL12AWT1 NSL12AWT1G
    Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)


    Original     		PDF NSL12AW NSL12AW/D NSL12AW NSL12AWT1 NSL12AWT1G

    p1565

    Abstract: 2SC5751
    Text: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF NE677M04 2SC5751 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS p1565 2SC5751

    ne678m04-a

    Abstract: 2SC5753
    Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


    Original     		PDF NE678M04 2SC5753 NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS 2SC5753

    2SC5753

    Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


    Original     		PDF 2SC5753 2SC5753-T2 2SC5753 nec k 813 2SC5753-T2 p1565 RF transistor

    nec 14305

    Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF 2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751

    MMBT2132T3

    Abstract: 318F AN569 MMBT2132T3G
    Text: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage


    Original     		PDF MMBT2132T3 MMBT2132T1/D MMBT2132T3 318F AN569 MMBT2132T3G

    Untitled

    Abstract: No abstract text available
    Text: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage


    Original     		PDF MMBT2132T3 MMBT2132T1/D

    NL6EBX-DC12V

    Abstract: MBB relay DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC12V NL6EBX-L2-DC24V
    Text: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible


    Original     		PDF

    NL6EBX-DC12V

    Abstract: MBB relay NL6EBX-L2-DC12V DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC24V
    Text: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 95 ID 4.5 A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP-6


    Original     		PDF BSL606SN H6327:

    diode D32-02

    Abstract: DIODE D32 -02 diode D32 BSS606N marking KE SOT-89
    Text: BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 3.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-89


    Original     		PDF BSS606N PG-SOT-89 H6327: diode D32-02 DIODE D32 -02 diode D32 BSS606N marking KE SOT-89

    BSR606N

    Abstract: BSR606N H6327
    Text: BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SC59


    Original     		PDF BSR606N PG-SC59 H6327: BSR606N BSR606N H6327

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2)

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4

    IPB160N04S4-02D

    Abstract: 4N0402D MJ10050 D160A 4N0402 73 marking
    Text: IPB160N04S4-02D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 1.9 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (ELV compliant 100% lead free)


    Original     		PDF IPB160N04S4-02D PG-TO263-7-3 4N0402D IPB160N04S4-02D 4N0402D MJ10050 D160A 4N0402 73 marking

    4N0402

    Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
    Text: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-03D 4N0402 4n0403 4N0402D IPB100N04S4 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D

    2SC1600

    Abstract: ne57500 NE57510
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series


    OCR Scan     		PDF NE57500 NE57510 NE575 b42752S 00b5b43 NE57500, 2SC1600 NE57510

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


    OCR Scan     		PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189