TRANSISTOR MW 131 Search Results

TRANSISTOR MW 131 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR MW 131 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC5454 Abstract: ic n 3856 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW	Original	2SC5454 2SC5454 ic n 3856	PDF
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available	Original	MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D	PDF
AN569 Abstract: MMBT2131T1 MMBT2131T1G 318F Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available	Original	MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D AN569 MMBT2131T1 MMBT2131T1G 318F	PDF
2SC5752 Abstract: 2SC5752-T1 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm	Original	2SC5752 2SC5752-T1 2SC5752 2SC5752-T1	PDF
nec japan 7812 Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	2SC5750 2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751	PDF
NSL12AW Abstract: NSL12AWT1 NSL12AWT1G Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)	Original	NSL12AW NSL12AW/D NSL12AW NSL12AWT1 NSL12AWT1G	PDF
p1565 Abstract: 2SC5751 Contextual Info: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	NE677M04 2SC5751 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS p1565 2SC5751	PDF
ne678m04-a Abstract: 2SC5753 Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm	Original	NE678M04 2SC5753 NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS 2SC5753	PDF
2SC5753 Abstract: nec k 813 2SC5753-T2 p1565 RF transistor Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm	Original	2SC5753 2SC5753-T2 2SC5753 nec k 813 2SC5753-T2 p1565 RF transistor	PDF
nec 14305 Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751	PDF
MMBT2132T3 Abstract: 318F AN569 MMBT2132T3G Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage	Original	MMBT2132T3 MMBT2132T1/D MMBT2132T3 318F AN569 MMBT2132T3G	PDF
Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage	Original	MMBT2132T3 MMBT2132T1/D	PDF
NL6EBX-DC12V Abstract: MBB relay DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC12V NL6EBX-L2-DC24V Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible	Original		PDF
NL6EBX-DC12V Abstract: MBB relay NL6EBX-L2-DC12V DC48V NL6EBX-DC110V NL6EBX-DC24V NL6EBX-DC48V NL6EBX-DC60V NL6EBX-L2-DC110V NL6EBX-L2-DC24V Contextual Info: 6PDT FLATPACK 2AMP DIL RELAY NL-RELAYS FEATURES 32.4 1.276 • Space saving dimensions — 25.4 mm x 32.4 mm × 10.9 mm 1.000 inch× 1.276 inch× 0.429 inch • Latching types available • Low operating power — 400 mW single side stable Transistor compatible	Original		PDF

Contextual Info: BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 95 ID 4.5 A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP-6	Original	BSL606SN H6327:	PDF
diode D32-02 Abstract: DIODE D32 -02 diode D32 BSS606N marking KE SOT-89 Contextual Info: BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 3.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-89	Original	BSS606N PG-SOT-89 H6327: diode D32-02 DIODE D32 -02 diode D32 BSS606N marking KE SOT-89	PDF
BSR606N Abstract: BSR606N H6327 Contextual Info: BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SC59	Original	BSR606N PG-SC59 H6327: BSR606N BSR606N H6327	PDF
2SC1600 Abstract: ne57500 NE57510 Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series	OCR Scan	NE57500 NE57510 NE575 b42752S 00b5b43 NE57500, 2SC1600 NE57510	PDF
NEC 41-A 002 Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for	OCR Scan	b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353	PDF
Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2)	PDF
IPB180P04 Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4 Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4	PDF
IPB160N04S4-02D Abstract: 4N0402D MJ10050 D160A 4N0402 73 marking Contextual Info: IPB160N04S4-02D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 1.9 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (ELV compliant 100% lead free)	Original	IPB160N04S4-02D PG-TO263-7-3 4N0402D IPB160N04S4-02D 4N0402D MJ10050 D160A 4N0402 73 marking	PDF
4N0402 Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-03D 4N0402 4n0403 4N0402D IPB100N04S4 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D	PDF
2SC1593 Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189 Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is	OCR Scan	b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189	PDF

TRANSISTOR MW 131 Search Results

TRANSISTOR MW 131 Result Highlights (5)

TRANSISTOR MW 131 Datasheets Context Search

2SC5454

AN569

2SC5752

nec japan 7812

NSL12AW

p1565

ne678m04-a

2SC5753

nec 14305

MMBT2132T3

NL6EBX-DC12V

NL6EBX-DC12V

diode D32-02

BSR606N

2SC1600

NEC 41-A 002

IPB180P04

IPB160N04S4-02D

4N0402

2SC1593