TRANSISTOR N51 Search Results

ZXTN5551FL

Abstract: TS16949 ZXTP5401FL
Contextual Info: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating

ZXTN5551Z

Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Contextual Info: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package

HOA0875-N51

Abstract: HOA087X SDP8406 SEP8506
Contextual Info: Datasheet - HOA0875-N51 HOA0875-N51 HOA Series Infrared Opaque Sensor, Transistor Output, No Mounting Tab, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval requirements, some

Contextual Info: rz7 SGS-m 0MS0N Ä T# 2N5191 [MO gfô l[L[iera®*S 2 N5192 MEDIUM POWER NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

STC5551F

Contextual Info: ㅊ 9+ STC5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)

STC5551

Abstract: ON semiconductor N51 transistor N51
Contextual Info: STC5551F Semiconductor NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier 4 • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)

STC5551

Abstract: STC555
Contextual Info: STC5551F NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) SOT-89

KSD-T5B012-001

Contextual Info: STC5551F Semiconductor NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 4 Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Contextual Info: STC5551F NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)

CM12A

Abstract: br 2222 npn ZX5T651F
Contextual Info: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS

Mosfet T460

Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
Contextual Info: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «

OPB861N

Abstract: OPB861N51 OPB861N55 transistor TIP 320
Contextual Info: E *Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS O PB 861 N51/OPB 861 N55 PACKAGE DIMENSIONS DESCRIPTION Th e O PB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

HOA6970-N51

Abstract: HOA6970
Contextual Info: HOA6970-N51 Page 1 HOME ABOUT US Search narrow your search Products Controls Monitoring and Lighting 352 Machine Safety (1702) Sensors (6223) Switches (9750) Wireless (21) Technology Capacitive (26) Electromechanica l (9301) Microstructure KEY INDUSTRIES SERVED

HOA6963-N51

Contextual Info: HOA6963-N51 Page 1 HOME ABOUT US Search narrow your search Products Controls Monitoring and Lighting 352 Machine Safety (1702) Sensors (6223) Switches (9750) Wireless (21) Technology Capacitive (26) Electromechanica l (9301) Microstructure KEY INDUSTRIES SERVED

Contextual Info: Product Page Page 1 HOME ABOUT US KEY INDUSTRIES SERVED PRODUCTS & INFORMATION NEWS & EVENTS HOA6972-N51 Optoschmitt Sensors Transmissive (Home : Products) Search narrow your search SALES & SUPPORT LOGIN contacts Customer Service Technical Support Products

HOA0961-N51

Abstract: ir sensor diode HOA096X HOA097X SDP8600 SEP8506 hoa0961
Contextual Info: HOA0961-N51 HOA Series Infrared Transmissive Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval requirements, some

HOA0971-N51

Abstract: HOA096X HOA097X SDP8600 SEP8506
Contextual Info: HOA0971-N51 HOA Series Infrared Opaque Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval requirements, some products may not be

HOA0961-N51

Abstract: 097X HOA096X HOA097X SDP8600 SEP8506 hoa0961 U.S. Sensor
Contextual Info: Datasheet - HOA0961-N51 HOA0961-N51 HOA Series Infrared Transmissive Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval

HOA0971-N51

Abstract: HOA0971 HOA096X HOA097X SDP8600 SEP8506
Contextual Info: Datasheet - HOA0971-N51 HOA0971-N51 HOA Series Infrared Opaque Optoschmitt Sensor, Diode Output, No Mounting Tab, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● ● Due to regional agency approval

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

2N5190

Contextual Info: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V