TRANSISTOR NB Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SCR523

Abstract: 2SCR523EB
Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB

Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB

Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB

KS8245A1

Abstract: ks82 ks52
Contextual Info: m NBiEX KS8245A1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SltlQlO DsrlinCjtOn Transistor Module 15 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

BUJ103AX

Abstract: BP317 BU1706AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

BP317

Abstract: BU1706AX BUJ204AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

BUJ204A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

BUJ103AX

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain

Contextual Info: m NBm x KD221K05HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H lQ h 'B & t S Dual Darlington Transistor Module 50 Amperes/1000 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for

Contextual Info: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are

KD324510

Contextual Info: m NBSK KD324510 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r H flQ tO n Transistor Module 100 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for

TRANSISTOR REPLACEMENT GUIDE

Abstract: All in one TRANSISTOR REPLACEMENT GUIDE DTA30 4SR44 TRANSISTOR BIPOLAIRE 4g13 PX28 SK17 how to test transistor PX28 BATTERY
Contextual Info: SE BA R T TE E MI T OR C E L L CO N PN PNP Transistor Analyser Model: DTA30 Analyseur de transistor Modèle: DTA30 Operation The DTA30 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any type of Bipolar transistor. With a press of the

diode T-71

Abstract: BUK657-400B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

BUT211

Abstract: BUT21
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.