TRANSISTOR NC Search Results
TRANSISTOR NC Result Highlights (5)
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Description |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR NC Datasheets Context Search
Catalog Datasheet |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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transistor
Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
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2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP | |
pnp DARLINGTON TRANSISTOR ARRAY
Abstract: M54583FP nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY
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M54583FP 400mA M54583FP 400mA) pnp DARLINGTON TRANSISTOR ARRAY nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY | |
M54513FP
Abstract: M5451
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M54513FP M54513FP M5451 | |
2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
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O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 | |
M54563FPContextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high |
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M54563FP 500mA M54563FP 500mA) | |
Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform |
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M63840FP 500mA M63840FP 500mA) | |
Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform |
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M63840KP 500mA M63840KP 500mA) | |
M54562FPContextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high |
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M54562FP 500mA M54562FP 500mA) | |
darlington Mitsubishi
Abstract: 20P2N-A DARLINGTON ARRAYS
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M54522FP 400mA M54522FP 400mA) darlington Mitsubishi 20P2N-A DARLINGTON ARRAYS | |
Contextual Info: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling |
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O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax: | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA143EE 416/SC | |
6aa markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA114YE 416/SC 6aa marking | |
transistor A 564
Abstract: S-AV8 2-13B1A 564 transistor S-AU4
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TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4 | |
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PT 4304 a transistor
Abstract: 2SC3587 noise diode
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2SC3587 2SC3587 PT 4304 a transistor noise diode | |
2SCR522MContextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC |
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2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A | |
2SCR522MContextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC |
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2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522UB R1010A | |
Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC |
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2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A | |
Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
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A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p | |
MJE2955
Abstract: 2N3645 bc557 BC307 BC212
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O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212 | |
Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for |
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OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06 | |
transistor sc59 markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a |
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DTC114TE DTC114TE 416/SC transistor sc59 marking | |
6aa marking
Abstract: 327 SOT-6
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DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6 | |
BUX20
Abstract: bux 716 transistor BUX
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BUX20 CB-159 BUX20 bux 716 transistor BUX |