TRANSISTOR NEC 2500 Search Results

TRANSISTOR NEC 2500 Result Highlights (5)

Part	Manufacturer	Description
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

TRANSISTOR NEC 2500 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ZO 107 MA Abstract: 341S Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low	OCR Scan	2SC5009 2SC5009 ZO 107 MA 341S	PDF
TRANSISTOR 2SC 2581 Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS	OCR Scan	2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733	PDF
IC SEM 2105 Abstract: 3771 nec Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low	OCR Scan	2SC5008 2SC5008 IC SEM 2105 3771 nec	PDF
928 606 402 00 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low	OCR Scan	2SC5008 2SC5008 928 606 402 00	PDF
2SC2570 Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135	PDF
PS8551L4 Abstract: PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c Contextual Info: IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house technologies Bipolar, CMOS and Bi-CMOS NEC Electronics can offer a complete portfolio of optoisolation products. The long of experience of NEC Electronics in developing and manufacturing highest quality optoelectronic products is reflected in hundreds	Original	EPMC-PU-0038-4 PS8551L4 PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c	PDF
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •	OCR Scan	2SC5015 2SC5015-T1 2SC5015-T2	PDF
CD 1691 CB Abstract: NEC 7924 NEC D 986 IC - 7434 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434	PDF
NEC 41-A 002 Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for	OCR Scan	b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353	PDF
transistor NEC D 882 p Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking	PDF
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation	OCR Scan	2SC5011	PDF
3563 1231 Abstract: transistor NEC B 617 nec d 1590 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain	OCR Scan	2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590	PDF
NEC 2532 n 749 Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation	OCR Scan	2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822	PDF
transistor NEC B 617 Abstract: nec. 5.5 473 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range	OCR Scan	2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473	PDF

transistor 2sc 1586 Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range	OCR Scan	2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor	PDF
nec transistor Abstract: transistor and schematic symbols Contextual Info: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION	OCR Scan	UPA101G UPA101G b427525 UPA101G-E1 2500/REEL b4275B5 00b5fl04 nec transistor transistor and schematic symbols	PDF
Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE	OCR Scan	UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL	PDF
transistor NEC B 617 Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and	OCR Scan	2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568	PDF
nec transistor Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE	OCR Scan	UPA102G UPA102G hM27S25 UPA102G-E1 2500/REEL nec transistor	PDF
NE41607 Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128 Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e	OCR Scan	b427mM NE416 NE41635 DE161 NE41607 NC921 Z171 NE41600 2SC2025 50m1n NE41615 Z128	PDF
TRANSISTOR GB 558 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
2SC5012-T1 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1	PDF
2SC2217 Abstract: 2SC2367 NE21935 Ic 9148 Contextual Info: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up	OCR Scan	NE21900 NE21903 NE21908 NE21935 NE219 NE21900) S12S21\| NE21900, E21903, E21908, 2SC2217 2SC2367 NE21935 Ic 9148	PDF
Silicon Bipolar Transistor Q6 Contextual Info: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded	OCR Scan	UPA101G UPA101B UPA101B: 14-pin UPA101G: UPA101B, UPA101G UPA101B UPA101Q Silicon Bipolar Transistor Q6	PDF

TRANSISTOR NEC 2500 Search Results

TRANSISTOR NEC 2500 Result Highlights (5)

TRANSISTOR NEC 2500 Datasheets Context Search

ZO 107 MA

TRANSISTOR 2SC 2581

IC SEM 2105

928 606 402 00

2SC2570

PS8551L4

CD 1691 CB

NEC 41-A 002

transistor NEC D 882 p

3563 1231

NEC 2532 n 749

transistor NEC B 617

transistor 2sc 1586

nec transistor

transistor NEC B 617

nec transistor

NE41607

TRANSISTOR GB 558

2SC5012-T1

2SC2217

Silicon Bipolar Transistor Q6