TRANSISTOR NEC 30 Search Results

transistor t07

Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

81E TRANSISTOR

Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Contextual Info: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power

2SC2558

Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
Contextual Info: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

Contextual Info: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

D1802

Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)

2SD596A

Abstract: transistor DV3 D1788 2SB624
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)

transistor D 2588

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.

Contextual Info: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic

2SC1449

Abstract: S10ms
Contextual Info: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.

Contextual Info: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

NE64800

Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES

k1498

Abstract: APPLICATION NOTE TEA-1035
Contextual Info: DATA SHEET T NEC , - • - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498 à SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1497/2SK1498 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

2SA1400

Abstract: 2SA1400-Z 2SC3588-Z MEI-1202
Contextual Info: DATA SHEET NEC , SILICON TRANSISTOR ' I 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 _ _ DESCRIPTION 2SA1400-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in m illim eters in Hybrid Integrated Circuits. FEATURES

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low