TRANSISTOR NEC A 192 Search Results

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS

Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)

D1403

Contextual Info: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance

MP-25

Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

P12152E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

MP-25

Abstract: NP84N04CHE NP84N04DHE NP84N04EHE NEC 8502
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

2SK3434

Abstract: 2SK3434-S 2SK3434-Z MP-25 MP-25Z transistor NEC a 192
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262 2SK3434-Z

NP48N055CHE

Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

MP-25

Abstract: NP48N055CLE NP48N055DLE NP48N055ELE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CLE, NP48N055DLE, NP48N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

transistor s99

Abstract: transistor s98 SDS S4 24V transistor s97 S186 S189 S190 SDS S2 24 V S187 PD16347
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16347 192-BIT AC-PDP DRIVER DESCRIPTION The µ PD16347 is a high-withstanding-voltage CMOS driver designed for use with a flat display panel such as a PDP, VFD, or EL panel. It consists of a 192-bit bi-directional shift register, 192-bit latch and high-withstanding-voltage

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters