TRANSISTOR NEW EDITION Search Results

TRANSISTOR NEW EDITION Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC023	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.19 V / tf=170 ns / New PW-Mold
TTA014	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723

TRANSISTOR NEW EDITION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
4435 power ic Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357 Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 \| S21 \| = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type	Original	2SC5336 2SC3357 4435 power ic transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357	PDF
2SC2149 Abstract: 2SC2148 micro X Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".	Original	2SC2148, 2SC2149 2SC2149 2SC2148 micro X	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
SIPC61N60S5 Contextual Info: Preliminary SIPC61N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC61N60S5	Original	SIPC61N60S5 Q67041A4009-A001 5413-N, SIPC61N60S5	PDF
SIPC14N60C2 Abstract: 5363P Contextual Info: Preliminary SIPC14N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60C2	Original	SIPC14N60C2 Q67050A4094-A001 5363P, SIPC14N60C2 5363P	PDF
SIPC14N60S5 Abstract: ultra low igss Contextual Info: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5	Original	SIPC14N60S5 Q67050A4093-A001 5363N, SIPC14N60S5 ultra low igss	PDF
SIPC26N60S5 Contextual Info: Preliminary SIPC26N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60S5	Original	SIPC26N60S5 Q67041-S2851 5303-S, SIPC26N60S5	PDF
SIPC69N60C2 Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2	Original	SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2	PDF
SIPC26N60C2 Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2	Original	SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2	PDF
SIPC10N60S5 Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5	Original	SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5	PDF
SIPC10N60C2 Contextual Info: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2	Original	SIPC10N60C2 Q67050A4090-A001 5353P, SIPC10N60C2	PDF

5423S Abstract: SIPC06N60S5 Contextual Info: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5	Original	SIPC06N60S5 5423S, 5423S SIPC06N60S5	PDF
SIPC26N60S5 Abstract: ip chip transistor Contextual Info: Preliminary SIPC26N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60S5	Original	SIPC26N60S5 Q67041S2851-A001 5303-P, SIPC26N60S5 ip chip transistor	PDF
SIPC06N60C2 Contextual Info: Preliminary SIPC06N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60C2	Original	SIPC06N60C2 5423P, SIPC06N60C2	PDF
SIPC02N60S5 Abstract: sipc02n Contextual Info: Preliminary SIPC02N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC02N60S5	Original	SIPC02N60S5 Q67050A4091-A001 5453N, SIPC02N60S5 sipc02n	PDF
SIPC10N60S5 Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5	Original	SIPC10N60S5 Q67050A4072-A001 5353-S, SIPC10N60S5	PDF
SIPC61N60S5 Abstract: Q67050-A4009 5413 diode Contextual Info: Preliminary SIPC61N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC61N60S5	Original	SIPC61N60S5 Q67050-A4009 5413-S, SIPC61N60S5 Q67050-A4009 5413 diode	PDF
Contextual Info: DATA SHEET SILICON TRANSISTORS 2 SC 2148 , 2 SC 2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are econom ical microwave transistors PACKAGE DIMENSIONS encapsulated into new herm etic stripline packages, "micro X".	OCR Scan	2SC2148, 2SC2149 2SC2149. 2SC2149	PDF
SIPC05N60S5 Abstract: transistor AI 232 Contextual Info: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5	Original	SIPC05N60S5 5313S, SIPC05N60S5 transistor AI 232	PDF
SIPC03N60S5 Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5	Original	SIPC03N60S5 80mm2 5343N, SIPC03N60S5	PDF
SIPC05N60S5 Contextual Info: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5	Original	SIPC05N60S5 5313N, SIPC05N60S5	PDF

TRANSISTOR NEW EDITION Search Results

TRANSISTOR NEW EDITION Result Highlights (5)

TRANSISTOR NEW EDITION Datasheets Context Search

2N2222A 338

y51 h 120c

RCA H 541

4435 power ic

2SC2149

transistor 2N4

SIPC61N60S5

SIPC14N60C2

SIPC14N60S5

SIPC26N60S5

SIPC69N60C2

SIPC26N60C2

SIPC10N60S5

SIPC10N60C2

5423S

SIPC26N60S5

SIPC06N60C2

SIPC02N60S5

SIPC10N60S5

SIPC61N60S5

SIPC05N60S5

SIPC03N60S5

SIPC05N60S5