TRANSISTOR NPN 2A SOT 23 Search Results

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER

Marking 2A

Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Contextual Info: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted

MMBT8050

Abstract: MMBT8050 BR mmbt8050 sot-23
Contextual Info: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package

MARKING 2A

Abstract: MMBT3906 MMBT3904
Contextual Info: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings

FSB560

Abstract: FSB560A
Contextual Info: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol

Contextual Info: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol

Contextual Info: BCP1766 2A, 40V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

FSB560

Abstract: FSB560A
Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SSOT-3

Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FMMT560

Abstract: FMMT560A MT560 MT560A
Contextual Info: Ml C O N D U C T O R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*

FMMT560

Contextual Info: SEM ICONDUC TO R t m July 1998 FMMT560 / FMMT560A E B SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Ta^ c^ o«— ^

FMMT560

Contextual Info: S E M IC O N D U C T O R tm July 1998 FMMT560 / FMMT560A *• B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute M axim um Ratings*

.0118 to92

Abstract: TSB772S TSD882S TSD882SCT TSD882SCY oc sot89
Contextual Info: TSD882S Low Vce sat NPN Transistor Pin assignment: TO-92 1. Emitter 2. Collector 3. Base BVCEO = 50V Ic = 3A VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA SOT-89 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

QM5HL-24

Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

2646 TRANSISTOR

Abstract: BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • ÔREOORb DDO'îSD'i b • BU 908 TTIiUIiFttiïiKiiK! electronic CrMlrve Tschnotogtes Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time

TRANSISTOR BC 157

Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

smd transistor g1

Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
Contextual Info: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents

shottkey diodes

Contextual Info: BACK Final Impala Linear Corporation June 1996 ILC6390/1 SOT-89 Step-Up PFM Switcher with Auto-Load Sense General Description Features 50 mA boost converter using Pulse Frequency Modulation, or PFM, technique, in 5-lead SOT-89 or a 5lead SOT-23 package. Only 3 external components