TRANSISTOR NPN 3EM Search Results

TRANSISTOR NPN 3EM Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

TRANSISTOR NPN 3EM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 3em Abstract: marking 3EM sot-23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value	Original	OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23	PDF
transistor marking 3em Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value	Original	OT-23 MMBTH10 transistor marking 3em	PDF
BC546 Abstract: BC547 45V 100mA NPN Transistor bc547 BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn Contextual Info: BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC546A 1Collector 2Base 3Emitter	Original	BC546 BC547 BC548 BC546A BC546B BC546C BC547A BC547B BC547C BC548A BC547 45V 100mA NPN Transistor BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn	PDF
transistor marking 3em Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1 Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc	Original	MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1	PDF
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc	Original	MMBTH10LT1, MMBTH10-4LT1	PDF
BC337 Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J	Original	BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25	PDF
transistor marking 3em Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2 Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS	Original	MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2	PDF
mps 1049 Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23 Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS	Original	MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23	PDF
JB marking transistor Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking Contextual Info: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo	Original	MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking	PDF
3dd13001 TRANSISTOR Abstract: 3DD13001 Contextual Info: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃	Original	3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001	PDF
Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6	Original	MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G NSVMMBTH10LT1G MMBTH10â 04LT1G MMBTH10LT1/D	PDF
transistor marking code 3EM SOT-23 Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6	Original	MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps	PDF
marking Specific Device Code Date Code sot-23 4l Abstract: transistor 3em Contextual Info: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable	Original	MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L AEC-Q101 OT-23 O-236) MMBTH10LT1/D marking Specific Device Code Date Code sot-23 4l transistor 3em	PDF
3DD13001 Contextual Info: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A	Original	3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001	PDF

transistor marking JB Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G Contextual Info: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25	Original	MMBTH10LT1G, MMBTH10-4LT1G MMBTH10LT1/D transistor marking JB MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G	PDF
transistor marking 3em Abstract: MMBTH10LT1 Contextual Info: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit	Original	MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1	PDF
JB marking transistor Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23 Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value	Original	MMBTH10 OT-23 MMBTH10 OT-23 JB marking transistor transistor marking 3em transistor marking JB J JB transistor marking 3EM sot-23 C40 SOT23	PDF
JB MARKING SOT-23 Abstract: DELTA fan bfb Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25	Original	MMBTH10LT1 OT-23 O-236AB) JB MARKING SOT-23 DELTA fan bfb	PDF
3DD13001 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range	Original	O-251 3DD13001 O-251 3DD13001	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc VCBO 30 Vdc v EBO 3.0 Vdc C ollector-Em itter Voltage	OCR Scan	MMBTH10LT1 OT-23 O-236AB)	PDF
transistor marking 3em Abstract: 556 ITT MMBTH10 sot-23 Marking YRE Contextual Info: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the	Original	MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE	PDF
mmbth10 Abstract: transistor marking 3em TRANSISTOR NPN 3EM Contextual Info: MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.	Original	MMBTH10 OT-23 MMBTH10 0078g 100MHz 01-June-2007 transistor marking 3em TRANSISTOR NPN 3EM	PDF
Contextual Info: Transistors SMD Type NPN Silicon VHF/UHF Transistor MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1	Original	MMBTH10 OT-23 100MHz	PDF
3DD13001 Contextual Info: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range	Original	O-251 3DD13001 O-251 3DD13001	PDF

TRANSISTOR NPN 3EM Search Results

TRANSISTOR NPN 3EM Result Highlights (5)

TRANSISTOR NPN 3EM Datasheets Context Search

transistor 3em

transistor marking 3em

BC546

transistor marking 3em

BC337

transistor marking 3em

mps 1049

JB marking transistor

3dd13001 TRANSISTOR

transistor marking code 3EM SOT-23

marking Specific Device Code Date Code sot-23 4l

3DD13001

transistor marking JB

transistor marking 3em

JB marking transistor

JB MARKING SOT-23

3DD13001

transistor marking 3em

mmbth10

3DD13001