TRANSISTOR NPN 548 Search Results

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

MSD42WT1

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA MSD42WT1 Preliminary Information NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier

transistor C 548 B

Abstract: BUY69A C 547 transistor 22iJ
Contextual Info: r = 7 SGS-THOMSON *>11 ¡«imiiigTOMOigS_ BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR • . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

PZTA42T1

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3

Motorola AN222A

Abstract: MJ10023 1N4937 sps transistor
Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS

MJ423

Abstract: mj423 motorola MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.

BF720T1

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage

BD169D

Abstract: BD169 transistor bd169 transistor bd170 BD170 Motorola design of audio amplifier MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by BD169/D SEMICONDUCTOR TECHNICAL DATA BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

Contextual Info: MOTOROLA Order this document by BD169/D SEMICONDUCTOR TECHNICAL DATA BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor c 9018

Contextual Info: UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. 1 TO-92 ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT Collector-Base Voltage PARAMETER

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

MJE 340 transistor

Abstract: 3140e
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

transistor KIA-70

Abstract: transistor C 547 transistor equivalent
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR BA1 L4L The BA1L4L is designed for use in medium speed switching circuit. FEATURE • Bias resistors built-in type NPN transistor equivalent circuit. iC Rt = 47 k SI R2 = 22 ki2 ABSOLUTE M A X IM U M RATINGS Maximum Temperatures

MSD1819A-RT1

Abstract: SMD310 sot323 transistor marking MOTOROLA
Contextual Info: MOTOROLA Order this document by MSD1819A–RT1/D SEMICONDUCTOR TECHNICAL DATA MSD1819A-RT1 NPN Silicon General Purpose Amplifier Transistor Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

MRF548

Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­