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    TRANSISTOR NPN U8 Search Results

    TRANSISTOR NPN U8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR NPN U8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) DESCRIPTION & FEATURES 1) Low VCE (sat) =0.5V(Typ) (IC /IB =2A/0.2A) 2) Epitaxial planar type, NPN silicon transistor FHD1766 ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89


    Original     		PDF FHD1766 OT-89 OT-89 FHD1766P FHD1766Q FHD1766R CHARA120 100MHz

    Untitled

    Abstract: No abstract text available
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type,


    Original     		PDF 500mA/50mA) FHB1132 OT-89 FHD1664 OT-89 DED1664Q FHD1664R 100mA 500mA

    transistor NPN 30 watt

    Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME


    Original     		PDF FHFCX491 OT-89 OT-89 FHFCX491 500mA 100mA 100mA 100MHZ transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR

    NPN Transistor 1A 100V

    Abstract: sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor FHFCX493 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX593 SOT-89 PIN ASSIGNMENT 引腳說明


    Original     		PDF FHFCX493 OT-89 FHFCX593 OT-89 FHFCX493 500mA 100mA 100MHZ NPN Transistor 1A 100V sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN

    high voltage npn transistor SOT-89

    Abstract: FHBCX53
    Text: ྯ૵਌ NPN Silicon AF Transistor FHBCX56 NPN Silicon AF Transistor ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1 For AF driver and output stages 2)High collector current 3)Low Collector-Emitter Saturation Voltage 4)Complement types:FHBCX53 PNP) SOT-89


    Original     		PDF FHBCX53 FHBCX56 OT-89 OT-89 FHBCX56 -10mA, 30VIE 150mA 500mA high voltage npn transistor SOT-89

    Untitled

    Abstract: No abstract text available
    Text: ྯ૵਌ Epitaxial Planar NPN Transistor FHT4375 Epitaxial Planar NPN Transistor ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1W Mounted on Ceramic Substrate Small Flat Package Complementary to FHT1663 SOT-89 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION


    Original     		PDF FHT1663 FHT4375 OT-89 OT-89 FHT4375O FHT4375Y 30VIE 500mA 500mAVCE 500mA,

    transistor npn U8

    Abstract: 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX19 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING


    Original     		PDF M3D088 BCX19 BCX17. MAM255 SCA63 115002/00/03/pp8 transistor npn U8 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317

    PC 1

    Abstract: 5P TRANSISTOR MARKING sot-89 na
    Text: ྯ૵਌ Epitaxial Planar NPN Transistor Epitaxial Planar NPN Transistor DESCRIPTION & FEATURES High current application Complement to FHB1273 FHD3205 ྯ૵਌ 概述及特點 SOT-89 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號 管腳符號


    Original     		PDF FHB1273 FHD3205 OT-89 OT-89 FHD3025Q FHD3205P 500mA 500mA, PC 1 5P TRANSISTOR MARKING sot-89 na

    PBSS9110T

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Preliminary specification 2003 Jul 28 Philips Semiconductors Preliminary specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T FEATURES


    Original     		PDF M3D088 PBSS8110T SCA75 613514/01/pp7 PBSS9110T

    FHD882

    Abstract: FHD882E FHD882R FHD882Q
    Text: ৖ൈྯ૵਌ NPN SILICON POWER Transistor NPN SILICON POWER Transistor FHD882 ৖ൈྯ૵਌ DESCRIPTION & FEATURES 概述及特點 。Low saturation voltage VCE sat0 <0.5V(@IC = 2A,IB = 0.2A 。Excellent HFE linearity and high HFE HFE:60 to 400(VCE=2V, IC=1A)


    Original     		PDF OT-89 FHD882 OT-89 FHD882R FHD882Q FHD882P 30VIE FHD882 FHD882E

    free transistor equivalent book

    Abstract: transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T SCA75 R75/02/pp12 free transistor equivalent book transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T R75/02/pp12 771-PBSS8110TT/R

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T


    Original     		PDF M3D088 PBSS8110T R75/02/pp12

    sot23 marking u8

    Abstract: PBSS8110T PBSS9110T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T R75/02/pp12 sot23 marking u8 PBSS8110T PBSS9110T

    BUL68H5

    Abstract: NPN transistor Electronic ballast
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL68H5 ●特点: 耐压高 开关速度快 安全工作区宽 ●FEATURES：•HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING


    Original     		PDF BUL68H5 BUL68H5 NPN transistor Electronic ballast

    BUL4370D

    Abstract: No abstract text available
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4370D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管


    Original     		PDF BUL4370D BUL4370D

    BUL6845D

    Abstract: NPN transistor Electronic ballast
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6845D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管


    Original     		PDF BUL6845D BUL6845D NPN transistor Electronic ballast

    max 474 ic data

    Abstract: NPN Transistor 1A metal switching
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2160DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL2160DL max 474 ic data NPN Transistor 1A metal switching

    150UM

    Abstract: BUL2190DL
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2190DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL2190DL 150UM BUL2190DL

    Bonding

    Abstract: Shenzhen SI Semiconductors BUL2260DL NPN transistor Electronic ballast semiconductors
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2260DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL2260DL Bonding Shenzhen SI Semiconductors BUL2260DL NPN transistor Electronic ballast semiconductors

    BUL2300DL

    Abstract: transistor cr
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2300DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL2300DL 550um 1000um 950um BUL2300DL transistor cr

    NPN transistor Electronic ballast

    Abstract: TRANSISTOR 436 BUL6853DL transistor cr
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL6853DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL6853DL NPN transistor Electronic ballast TRANSISTOR 436 BUL6853DL transistor cr

    u806

    Abstract: u806 diode BU806FI JIS B 0409 BU806
    Text: SGS-THOMSON !LiM iO gS BU806/FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR


    OCR Scan     		PDF BU806/FI BU807 BU806 BU807 BU806FI T0-220 ISOWATT22C) BU806/FI u806 u806 diode JIS B 0409

    bcw 918

    Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
    Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


    OCR Scan     		PDF O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115