CD3922
Abstract: No abstract text available
Text: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2
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CD3922
CD3922
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2SC2952
Abstract: high frequency transistor S21E
Text: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-33 DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC
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2SC2952
2SC2952
S21E2
high frequency transistor
S21E
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TPV5051-1
Abstract: No abstract text available
Text: TPV5051-1 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE BMA 2A DESCRIPTION: The TPV5051-1 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. MAXIMUM RATINGS IC 2.6 A EACH SIDE VCE 25 V PDISS 65 W @ TC = 25 OC (TOTAL) TJ -65 OC to +200 OC
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TPV5051-1
TPV5051-1
2X100
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ASI10725
Abstract: VHB25-28S
Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC
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VHB25-28S
VHB25-28S
112x45°
ASI10725
ASI10725
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ASI10567
Abstract: AVD400
Text: AVD400 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° DESCRIPTION: 2xB The ASI AVD400 is Designed for C F E D G FEATURES: I • • • Omnigold Metalization System N O -65 C to +250 C TSTG -65 OC to +200 OC θ JC 0.12 OC/W
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AVD400
AVD400
ASI10567
ASI10567
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ASI10680
Abstract: No abstract text available
Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold Metalization System B J IC 2.0 A VCBO 36 V VCER 18 V G H K 37 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC
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ASI10680
ASI10680
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ASI10555
Abstract: AVD004P
Text: AVD004P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD004P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 650 mA PEAK VCB 32 V PDISS 18 W PEAK -65 OC to +200 OC
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AVD004P
100x45°
AVD004P
ASI10555
ASI10555
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ASI10563
Abstract: AVD090P
Text: AVD090P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A A DESCRIPTION: .100x45° The ASI AVD090P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D E MAXIMUM RATINGS 6.5 A PEAK IC 55 V VCB PDISS 250 W PEAK -65 OC to +200 OC
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AVD090P
100x45°
AVD090P
ASI10563
ASI10563
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ASI10557
Abstract: AVD015P
Text: AVD015P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD015P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 1.25 A PEAK VCB 50 V PDISS 50 W PEAK -65 OC to +200 OC
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AVD015P
100x45°
AVD015P
ASI10557
1150MHz
ASI10557
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ASI10630
Abstract: MLN2027F
Text: MLN2027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI MLN2027F is Designed for B .060 x 45° CHAMFER C E FEATURES: G • • • Omnigold Metalization System L 300 mA VCE 20 V PDISS - W O TSTG -65 OC to +200 OC
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MLN2027F
MLN2027F
ASI10630
ASI10630
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ASI10636
Abstract: No abstract text available
Text: OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: A The ASI OSC-0.3C is Designed for B FEATURES: • • • Omnigold Metalization System C F E D MAXIMUM RATINGS IC 225 mA VCB 25 V O 5.0 W @ TC = 25 C PDISS TJ -65 OC to +200 OC
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ASI10636
ASI10636
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ASI10561
Abstract: AVD075P
Text: AVD075P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD075P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS IC TJ 55 V 250 W PEAK -65 OC to +200 OC O -65 C to +150 C
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AVD075P
100x45°
AVD075P
ASI10561
ASI10561
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DB30A
Abstract: ASI10639
Text: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC
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ASI10639
DB30A
ASI10639
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5B TRANSISTOR
Abstract: ASI10642
Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC
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8-32UNC
ASI10642
5B TRANSISTOR
ASI10642
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TP2314
Abstract: ic tp2314 high frequency transistor
Text: TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC
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TP2314
TP2314
ic tp2314
high frequency transistor
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transistor oc 76
Abstract: 7812R 7812
Text: ST 7812R 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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7812R
O-252
transistor oc 76
7812R
7812
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7812
Abstract: TRANSISTOR 7812 7812 voltage regulator 7812 MAX INPUT VOLTAGE ma 7812 7812 1A ci 7812 regulator 7812 7812 regulator voltage regulator 7812 datasheet
Text: ST 7812 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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O-220
7812
TRANSISTOR 7812
7812 voltage regulator
7812 MAX INPUT VOLTAGE
ma 7812
7812 1A
ci 7812
regulator 7812
7812 regulator
voltage regulator 7812 datasheet
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transistor oc 76
Abstract: 7812R
Text: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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7812R
O-252
transistor oc 76
7812R
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7812R
Abstract: transistor oc 76
Text: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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7812R
12emperature,
O-252
7812R
transistor oc 76
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2N1925
Abstract: g500ma
Text: 2N1925 GERMANIUM PNP TRANSISTOR PACKAGE STYLE TO- 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. M A X IM U M R A T IN G S lc 500 mA VcER -40 V pd is s 225 mW @ Ta # 25 OC Tj -65 OC to +100 OC Ts t g -65 OC to +100 OC
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2N1925
g500ma
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2N2920
Abstract: No abstract text available
Text: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC
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2N2920
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2N3553
Abstract: No abstract text available
Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g
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2N3553
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2N2920A
Abstract: No abstract text available
Text: 2N2920A SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 3O mA 6O V O m Ie < MAXIMUM RATINGS Pd i s s SOO mW @ Ta ' (S OC Pd i s s
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2N2920A
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YTF830
Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH YTF830 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR Unit in mn DRIVE APPLICATIONS. 10.3MAX. ¿ 3 .6 * 0 . 2 -ë -f FEATURES:
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YTF830
00A/m
YTF830
Field Effect Transistor Silicon N Channel MOS vdss 600
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