TRANSISTOR OC 76 Search Results

TRANSISTOR OC 76 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR OC 76 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CD3922 Contextual Info: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2	Original	CD3922 CD3922	PDF
2N1925 Abstract: g500ma Contextual Info: 2N1925 GERMANIUM PNP TRANSISTOR PACKAGE STYLE TO- 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. M A X IM U M R A T IN G S lc 500 mA VcER -40 V pd is s 225 mW @ Ta # 25 OC Tj -65 OC to +100 OC Ts t g -65 OC to +100 OC	OCR Scan	2N1925 g500ma	PDF
2SC2952 Abstract: high frequency transistor S21E Contextual Info: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-33 DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC	Original	2SC2952 2SC2952 S21E2 high frequency transistor S21E	PDF
2N2920 Contextual Info: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC	OCR Scan	2N2920	PDF
2N3553 Contextual Info: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g	OCR Scan	2N3553	PDF
TPV5051-1 Contextual Info: TPV5051-1 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE BMA 2A DESCRIPTION: The TPV5051-1 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. MAXIMUM RATINGS IC 2.6 A EACH SIDE VCE 25 V PDISS 65 W @ TC = 25 OC (TOTAL) TJ -65 OC to +200 OC	Original	TPV5051-1 TPV5051-1 2X100	PDF
ASI10725 Abstract: VHB25-28S Contextual Info: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC	Original	VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725	PDF
ASI10567 Abstract: AVD400 Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° DESCRIPTION: 2xB The ASI AVD400 is Designed for C F E D G FEATURES: I • • • Omnigold Metalization System N O -65 C to +250 C TSTG -65 OC to +200 OC θ JC 0.12 OC/W	Original	AVD400 AVD400 ASI10567 ASI10567	PDF
ASI10680 Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold Metalization System B J IC 2.0 A VCBO 36 V VCER 18 V G H K 37 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC	Original	ASI10680 ASI10680	PDF
ASI10555 Abstract: AVD004P Contextual Info: AVD004P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD004P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 650 mA PEAK VCB 32 V PDISS 18 W PEAK -65 OC to +200 OC	Original	AVD004P 100x45° AVD004P ASI10555 ASI10555	PDF
ASI10563 Abstract: AVD090P Contextual Info: AVD090P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A A DESCRIPTION: .100x45° The ASI AVD090P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D E MAXIMUM RATINGS 6.5 A PEAK IC 55 V VCB PDISS 250 W PEAK -65 OC to +200 OC	Original	AVD090P 100x45° AVD090P ASI10563 ASI10563	PDF
ASI10557 Abstract: AVD015P Contextual Info: AVD015P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL A DESCRIPTION: A .100x45° The ASI AVD015P is Designed for C FEATURES: B • • • Omnigold Metalization System ØG D MAXIMUM RATINGS E IC 1.25 A PEAK VCB 50 V PDISS 50 W PEAK -65 OC to +200 OC	Original	AVD015P 100x45° AVD015P ASI10557 1150MHz ASI10557	PDF
ASI10630 Abstract: MLN2027F Contextual Info: MLN2027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI MLN2027F is Designed for B .060 x 45° CHAMFER C E FEATURES: G • • • Omnigold Metalization System L 300 mA VCE 20 V PDISS - W O TSTG -65 OC to +200 OC	Original	MLN2027F MLN2027F ASI10630 ASI10630	PDF
ASI10636 Contextual Info: OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: A The ASI OSC-0.3C is Designed for B FEATURES: • • • Omnigold Metalization System C F E D MAXIMUM RATINGS IC 225 mA VCB 25 V O 5.0 W @ TC = 25 C PDISS TJ -65 OC to +200 OC	Original	ASI10636 ASI10636	PDF

DB30A Abstract: ASI10639 Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC	Original	ASI10639 DB30A ASI10639	PDF
5B TRANSISTOR Abstract: ASI10642 Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC	Original	8-32UNC ASI10642 5B TRANSISTOR ASI10642	PDF
high frequency transistor Abstract: TP2314A Contextual Info: TP2314A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I 400 mA V 16 V PDISS 5.0 W @ TC = 25 OC	Original	TP2314A TP2314A high frequency transistor	PDF
TP2314 Abstract: ic tp2314 high frequency transistor Contextual Info: TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC	Original	TP2314 TP2314 ic tp2314 high frequency transistor	PDF
2N2920A Contextual Info: 2N2920A SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 3O mA 6O V O m Ie < MAXIMUM RATINGS Pd i s s SOO mW @ Ta ' (S OC Pd i s s	OCR Scan	2N2920A	PDF
transistor oc 76 Abstract: 7812R 7812 Contextual Info: ST 7812R 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R O-252 transistor oc 76 7812R 7812	PDF
YTF830 Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600 Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH YTF830 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR Unit in mn DRIVE APPLICATIONS. 10.3MAX. ¿ 3 .6 * 0 . 2 -ë -f FEATURES:	OCR Scan	YTF830 00A/m YTF830 Field Effect Transistor Silicon N Channel MOS vdss 600	PDF
7812 Abstract: TRANSISTOR 7812 7812 voltage regulator 7812 MAX INPUT VOLTAGE ma 7812 7812 1A ci 7812 regulator 7812 7812 regulator voltage regulator 7812 datasheet Contextual Info: ST 7812 3-terminal 1A positive voltage regulator Features • Output Current up to 1A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC	Original	O-220 7812 TRANSISTOR 7812 7812 voltage regulator 7812 MAX INPUT VOLTAGE ma 7812 7812 1A ci 7812 regulator 7812 7812 regulator voltage regulator 7812 datasheet	PDF
transistor oc 76 Abstract: 7812R Contextual Info: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R O-252 transistor oc 76 7812R	PDF
7812R Abstract: transistor oc 76 Contextual Info: ST 7812R 3-terminal 1 A positive voltage regulator Features • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	7812R 12emperature, O-252 7812R transistor oc 76	PDF

TRANSISTOR OC 76 Search Results

TRANSISTOR OC 76 Result Highlights (5)

TRANSISTOR OC 76 Datasheets Context Search

CD3922

2N1925

2SC2952

2N2920

2N3553

TPV5051-1

ASI10725

ASI10567

ASI10680

ASI10555

ASI10563

ASI10557

ASI10630

ASI10636

DB30A

5B TRANSISTOR

high frequency transistor

TP2314

2N2920A

transistor oc 76

YTF830

7812

transistor oc 76

7812R