TRANSISTOR P 10 Search Results

2N1046

Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Contextual Info: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an

2n6287

Contextual Info: 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. . Page 1 of 1 Enter Your Part # Home Part Number: 2N6287 Online Store 2N6287 Diodes 20 Transistors A complementary N -P-N and P-N -P monolithic Integrated Circuits darlington power transistor. High voltage rating 100 V

8B123

Abstract: 2SB1232 2SD1842 1SB12
Contextual Info: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

Contextual Info: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •

Contextual Info: NEC PHOTO TRANSISTOR ELECTRON DEVICE PHI 04 PHOTO TRANSISTOR -N E P O C SERIES The PH 104 is a p h o to transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable fo r a detector o f a ph oto interrupter. in millimeters inches 3.25 (0 1 2 8 )

transistor marking T2

Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
Contextual Info: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base

transistor 45 f 122

Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE
Contextual Info: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.

1BW TRANSISTOR

Contextual Info: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage

BFG23

Contextual Info: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.

transistor 2n

Abstract: 3904
Contextual Info: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor

Contextual Info: PMBT5401 _ J V_ SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor fo r general purposes and especially in telephony applications and encapsulated in a SOT-23 package. QUICK REFERENCE DATA Collector-base voltage open emitter

MPSU60

Abstract: MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541
Contextual Info: MPS-U60 SILICON PNP SILICON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR . . . designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. • Com plem ent to N P N T y p e M PS-U 10

2N6897

Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751
Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

transistor TIP3055

Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.

marking code ER sot 143

Abstract: transistor D95 TRANSISTOR C
Contextual Info: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base

BF550

Abstract: transistor marking code 325 0024-B
Contextual Info: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type

Micropower Amplifiers

Abstract: n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3
Contextual Info: Arrays Transistor-continued COS/MOS Transistor Array - For Linear Circuit Applications c a 36 oo Applications and Features Terminal 1. Channel High input resistance: 100GS2 typ . Lo w gate-terminal curren t: 10 pA (typ .) Matched p-channel p air: Gate-voltage

2N6897

Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,