TRANSISTOR P 112 Search Results

TRANSISTOR P 112 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR P 112 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
TRANSISTOR SMD MARKING CODE QR Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11 Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium	Original	PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11	PDF
1427H Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427 Contextual Info: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r	OCR Scan	PAI427 uPA1427 1427H PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 PA1427	PDF
MOSFET TRANSISTOR SMD MARKING CODE 11 Abstract: P-CHANNEL MOSFET Contextual Info: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium	Original	PMC85XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD MARKING CODE 11 P-CHANNEL MOSFET	PDF
BFG96 Abstract: BFG32 MSB037 3H2 philips MBB352 Contextual Info: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	BFG32 OT103 BFG96. D04SD3S MSB037 OT103. BFG96 BFG32 3H2 philips MBB352	PDF
BFQ51C Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173 Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,	OCR Scan	BFQ51C BFP90A. bb53T31 T-31-17 BFQ51C marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173	PDF
transistor smd zG Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG Contextual Info: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with	OCR Scan	BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG	PDF
CMBT3906 Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS	OCR Scan	CMBT3906 CMBT3906	PDF
D2C17 Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf	PDF
C4722 Contextual Info: \ P P I i l \ l l II'll \ < l l ’ Compensation for Linear Regulators by k io r.in In the m ajority o f low drop and qu asi low d rop com posite N P N -P N P ) regulators, the pass device or the pass device driver, is a lateral PN P transistor. The lateral PN P transistor is inherently a Ion' frequ en cy c u to ff device w ith a poor transient response.	OCR Scan		PDF
nec 2571 Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .	OCR Scan	2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz	PDF
Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 0.14 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	CMBT3906	PDF
MDA425 Abstract: MDA427 BLV93 MDA422 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV93 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz	Original	BLV93 OT-171) MDA425 MDA427 BLV93 MDA422	PDF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class	OCR Scan	TPV5051 BD135	PDF
Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	bbS3T31 OT186 BUK443-1OOA/B BUK443 -100A -100B bbS3t131 003052M BUK443-100A/B	PDF
TRANSISTOR GB 558 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
transistor A 564 Abstract: transistor vc 548 3B 843 Transistor 2217S2 Contextual Info: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	OT173 BFQ66 711Dfl2b transistor A 564 transistor vc 548 3B 843 Transistor 2217S2	PDF
BT 156 transistor Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor Contextual Info: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.	OCR Scan	0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor	PDF
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1.3 dB ty p . @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB ty p	OCR Scan	2SC5185 2SC5185-T1 2SC5185-T2	PDF
BFG96 Contextual Info: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96	PDF
SOT173 Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor Contextual Info: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	BFQ66 OT173X. SOT173 D-045 BFQ66 philips 586 K1HC k 219 transistor	PDF
CMBT3906 Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 : 2A P A C K A G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_ 0.60 0.40 0.89	OCR Scan	CMBT3906 100nA; CMBT3906	PDF
bfq34 application note Abstract: ON4497 BFQ34 sf 122 transistor Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a	OCR Scan	DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor	PDF

TRANSISTOR P 112 Search Results

TRANSISTOR P 112 Result Highlights (5)

TRANSISTOR P 112 Datasheets Context Search

mcl610

MCT8 opto

TRANSISTOR SMD MARKING CODE QR

1427H

MOSFET TRANSISTOR SMD MARKING CODE 11

BFG96

BFQ51C

transistor smd zG

CMBT3906

D2C17

C4722

nec 2571

MDA425

TRANSISTOR GB 558

transistor A 564

BT 156 transistor

BFG96

SOT173

CMBT3906

bfq34 application note