TRANSISTOR P1 3 Search Results

TRANSISTOR P1 3 Result Highlights (5)

Part	Manufacturer	Description
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR P1 3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-42070 Contextual Info: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that	Original	AT-42070 5966-4945E 5989-2654EN	PDF
AT-42035 Abstract: AT42035G AT-42035G Contextual Info: Agilent AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42035 is a general purpose NPN bipolar transistor that	Original	AT-42035 5988-4734EN 5989-2652EN AT42035G AT-42035G	PDF
Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that	Original	AT-42036 5988-4735EN 5989-2653EN	PDF
transistor s11 s12 s21 s22 Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22	PDF
AT-64023 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E S21E	PDF
AT64020 Abstract: AT-64020 Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 5965-8915E AT64020	PDF
AT-64020 Abstract: 200 mil BeO package Contextual Info: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 5965-8915E 5989-2657EN 200 mil BeO package	PDF
Contextual Info: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 5965-8916E 5989-2658EN	PDF
AT-64020 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 5965-8915E S21E	PDF
AT64020 Abstract: AT-64020 S21E Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 AT64020 S21E	PDF
AT-64023 Abstract: S21E Contextual Info: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 S21E	PDF
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO	OCR Scan	FGX591 FCX491 -500mA, -100mA* -100m FMMT591 -50mA, f-100M	PDF
AT-42000 Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4 Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz	Original	AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4	PDF
BFR92 Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor Contextual Info: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR	OCR Scan	BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor	PDF

136.21 Abstract: AT42010 AT-42010 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E	PDF
micro-x 420 Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz	Original	AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E	PDF
micro-x 420 Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz	Original	AT-42036 5980-1854E micro-x 420	PDF
AT-42035 Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42035 AT-42035 RN/50 5965-8911E	PDF
BFR92 Abstract: BFR92A BFR92 transistor transistor p2 marking Contextual Info: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,	Original	BFR92 BFR92A OT-23 BFR92A BFR92 transistor transistor p2 marking	PDF
8909E Abstract: AT-42000 AT-42000-GP4 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz	Original	AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E	PDF
AT42070 Abstract: AT-42070 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz	Original	AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E	PDF
AT-42035 Abstract: micro-x 420 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42035 AT-42035 RN/50 5965-8911E 5988-4734EN micro-x 420 S21E	PDF
2SK2541 Abstract: MEI-1202 MF-1134 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET D EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING	OCR Scan	2SK2541 2SK2541 MEI-1202 MF-1134	PDF
2SK1198 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor	OCR Scan	2SK1198 2SK1198 1988M	PDF

TRANSISTOR P1 3 Search Results

TRANSISTOR P1 3 Result Highlights (5)

TRANSISTOR P1 3 Datasheets Context Search

AT-42070

AT-42035

transistor s11 s12 s21 s22

AT-64023

AT64020

AT-64020

AT-64020

AT64020

AT-64023

AT-42000

BFR92

136.21

micro-x 420

micro-x 420

AT-42035

BFR92

8909E

AT42070

AT-42035

2SK2541

2SK1198