TRANSISTOR P13 Search Results

TRANSISTOR P13 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR P13 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current	OCR Scan	2SC5507 2SC5507-T2 Rn/50 P13864E 13864E J1V0DS00	PDF
transistor p13 Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	Original	LDTA114WLT1G OT-23 transistor p13 LDTA114WLT1G marking P13 sot-23 p13 transistor	PDF
Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,	OCR Scan	2SC5508 2SC5508-T2 Rn/50 13865E J1V0DS00 0DS00	PDF
2SC5437 Abstract: 2SC5195 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT	Original	2SC5437 2SC5437 2SC5195	PDF
transistor k 3562 Abstract: 2SC5007 2SC5433 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT	Original	2SC5433 transistor k 3562 2SC5007 2SC5433	PDF
2SC5454 Abstract: ic n 3856 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW	Original	2SC5454 2SC5454 ic n 3856	PDF
transistor marking T79 ghz Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz Contextual Info: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications	OCR Scan	2SC5508 2SC5508 2SC5508-T2 transistor marking T79 ghz TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz	PDF
of 828 Transistor Abstract: transistor NEC K 946 nec d 588 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) • Contains same chip as 2SC5008	OCR Scan	2SC5008 of 828 Transistor transistor NEC K 946 nec d 588	PDF
marking r55 Abstract: K 608 2SC5455 1117 transistor 0340 180 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications +0.2 +0.2 3 2 1.5 –0.1 Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage	Original	2SC5455 marking r55 K 608 2SC5455 1117 transistor 0340 180	PDF
Contextual Info: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current	OCR Scan	2SC5507 2SC5507 2SC5507-T2	PDF
IC 7443 Abstract: 2SC5432 2SC5006 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT	Original	2SC5432 IC 7443 2SC5432 2SC5006	PDF
9926 transistor Abstract: 2SC5008 2SC5434 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 1.8 mm × 0.59 mm: TYP.) UNIT	Original	2SC5434 9926 transistor 2SC5008 2SC5434	PDF
2SC5010 Abstract: 2SC5435 V 8623 transistor marking tk 9418 transistor Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT	Original	2SC5435 2SC5010 2SC5435 V 8623 transistor marking tk 9418 transistor	PDF

XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
sf 128 transistor Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.	Original	SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47	PDF
tb 1253 ang Abstract: 2SC5004 2SC5431 nec 3225 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT Collector to Base Voltage	Original	2SC5431 15ecial: tb 1253 ang 2SC5004 2SC5431 nec 3225	PDF
ST T8 3580 Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)	OCR Scan	2SC5186 ST T8 3580 ST T8 3560 2SC5436 st zo 607 ce 2826 ic	PDF
nec transistor k 4145 Abstract: tb 1253 ang 2SC5004 2SC5431 2SC5431-T1 nec k 4145 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION	Original	2SC5431 2SC5004 2SC5431-T1 nec transistor k 4145 tb 1253 ang 2SC5004 2SC5431 2SC5431-T1 nec k 4145	PDF
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 1.8 mm x 0.59 mm: TYP.) •	OCR Scan	2SC5434 2SC5008	PDF
em 434 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super m ini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) •	OCR Scan	2SC5432 2SC5006 em 434	PDF
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.)	OCR Scan	2SC5436 2SC5186	PDF
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1	OCR Scan	2SC5437 2SC5195	PDF
marking TN Abstract: transistor c 5083 2SC5186 2SC5436 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)	Original	2SC5436 marking TN transistor c 5083 2SC5186 2SC5436	PDF

TRANSISTOR P13 Search Results

TRANSISTOR P13 Result Highlights (5)

TRANSISTOR P13 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

transistor p13

2SC5437

transistor k 3562

2SC5454

transistor marking T79 ghz

of 828 Transistor

marking r55

IC 7443

9926 transistor

2SC5010

XC6SLX16-CSG324

sf 128 transistor

tb 1253 ang

ST T8 3580

nec transistor k 4145

em 434

marking TN