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    TRANSISTOR P33 Search Results

    TRANSISTOR P33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking P33 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT


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    PDF M3D088 PDTC143TT MAM360 PDTC143TT SCA60 115104/1200/01/pp8 marking P33 transistor

    C10535E

    Abstract: C11531E fb1l3n
    Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive


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    PDF C11531E) C10535E C11531E fb1l3n

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


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    PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


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    PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    FB1F3P

    Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30
    Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive


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    PDF SC-59) FB1F3P ic marking P30 FB1A4M marking P32 transistor transistor marking p30

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2


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    PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    12vdc motor forward reverse control diagram

    Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
    Text: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,


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    PDF

    2DB1424R

    Abstract: J-STD-020D
    Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes


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    PDF 2DB1424R 2DD2150) OT89-3L J-STD-020D MIL-STD-202, DS31329 2DB1424R J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF 2DB1424R 2DD2150) OT89-3L J-STD-020D MIL-STD-202, DS31329

    P33R

    Abstract: 2DB1424R 2DB14
    Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes


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    PDF 2DB1424R 2DD2150) OT89-3L OT89-3L J-STD-020D MIL-STD-202, DS31329 621-2DB1424R-13 2DB1424R-13 P33R 2DB1424R 2DB14

    TRANSISTOR p50

    Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
    Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the


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    PDF eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


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    PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


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    PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    p331 TRANSISTOR

    Abstract: K12B P331 XB1117 Transistor P331
    Text: XB1117 Series ETR0315_005a 1A Low Dropout Positive Voltage Regulator •GENERAL DESCRIPTION The XB1117 series is 1A Bi-polar transistor LDO voltage regulator. Output voltage of the XB1117P series is fixed to 1.8V, 2.5V, 3.3V, and 5.0V. The XB1117K series output voltage is adjustable by the external resistors. Please refer to the absolute


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    PDF XB1117 ETR0315 XB1117P XB1117K XB1117P50 XB1117P18, p331 TRANSISTOR K12B P331 Transistor P331

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: i_L N AMER P H I L I P S / D I S CR E T E bbSBTBl 0015251 1 □ bE D T RZ2833B45W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.


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    PDF RZ2833B45W 100/us; bbS3131 D01535S P-33-13

    Untitled

    Abstract: No abstract text available
    Text: [ r b t5 3 i3 i DEVELOPMENT DATA d o n m a • MJE13006 MJE13007 Thf$ data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D p-33_ 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed glass-passivated npn power transistor in a TO-220 envelope, intended fo r use


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    PDF MJE13006 MJE13007 O-220 bb53T31 T-33-13 7Z2423Q

    Untitled

    Abstract: No abstract text available
    Text: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.


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    PDF b3b72S4 P33-3 2C6052HV 2C6059HW Rang1000

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP320,TLP320-2/TLP320-4 TENTATIVE TOSHIBA PHOTOCOUPLER Ti P33fi • ■ m m g Ti m ■ GaAs IRED & PHOTO-TRANSISTOR w Ti g m pun-d ■ «r v ■ TELECOMMUNICATION U n it in mm TLP320 <3 OFFICE MACHINE TELEPHONE USE EQUIPMENT rLI Lk. 1 2 icir 4,53 ± 0.25


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    PDF TLP320 TLP320-2/TLP320-4 P33fi TLP320 TLP320, TLP320-2 TLP320-4 150mA.

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 2SC3987 r ' 3 5 ' 1 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2221A Use . Switching of L load motor driver, printer hammer driver, relay driver Features • High DC current gain . Large current capacity and wide ASO


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    PDF 2SC3987

    407f

    Abstract: 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors
    Text: PHILIPS INTE RNAT ION AL M5E D E3 711Qfi5ti OGaOôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators


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    PDF 711Qfi5ti BU406F BU407F OT186 1Q62b 3D64t. 407f 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors

    l78s24ct

    Abstract: L78S L78S12CT
    Text: rZ Z Ä 7 # S G S -T H O M S O N L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A' ■ OUTPUT VOLTAGES O F5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 1 8 ; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION


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    PDF L78S00 L78S00 O-220 essenL78S00 l78s24ct L78S L78S12CT

    2N515

    Abstract: 2N5151 2N5153 bi 370 transistor 2N5152 2N5154 2N5663 SFT6800 SFT6900 transistor 359 AJ
    Text: S O L I D ST AT E D E V I C E S INC 1SE D GOOEllb 1 PRELIMINARY DATA SHEET SFT6900 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 FEATURES


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    PDF 3tt011 SFT6900 SFT6800 2N5663 2N515 2N5151 2N5153 bi 370 transistor 2N5152 2N5154 SFT6800 transistor 359 AJ

    BUP101

    Abstract: bup transistor A 671 transistor
    Text: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2


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    PDF 823SbD5 QDS13bci BUP101 O-218 C67060-A1000-A2 01234s6789a10 r-33-/3 BUP101 bup transistor A 671 transistor