marking P33 transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT
|
Original
|
PDF
|
M3D088
PDTC143TT
MAM360
PDTC143TT
SCA60
115104/1200/01/pp8
marking P33 transistor
|
C10535E
Abstract: C11531E fb1l3n
Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
|
Original
|
PDF
|
C11531E)
C10535E
C11531E
fb1l3n
|
XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
|
Original
|
PDF
|
DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
|
sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
|
Original
|
PDF
|
SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
|
FB1F3P
Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30
Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive
|
Original
|
PDF
|
SC-59)
FB1F3P
ic marking P30
FB1A4M
marking P32 transistor
transistor marking p30
|
marking CODE n3 6PIN
Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2
|
Original
|
PDF
|
2SA1235
marking CODE n3 6PIN
MOSFET TRANSISTOR SMD MARKING CODE nh
INK0001AC
RT8H
2SA798 equivalent
2SC2259
marking code NJ SMD Transistor
MC931 diode
smd transistor marking A7 p7
transistor smd marking ka p7
|
12vdc motor forward reverse control diagram
Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Text: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,
|
Original
|
PDF
|
|
2DB1424R
Abstract: J-STD-020D
Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes
|
Original
|
PDF
|
2DB1424R
2DD2150)
OT89-3L
J-STD-020D
MIL-STD-202,
DS31329
2DB1424R
J-STD-020D
|
Untitled
Abstract: No abstract text available
Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
|
Original
|
PDF
|
2DB1424R
2DD2150)
OT89-3L
J-STD-020D
MIL-STD-202,
DS31329
|
P33R
Abstract: 2DB1424R 2DB14
Text: 2DB1424R PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available 2DD2150 Ideally Suited for Automated Assembly Processes
|
Original
|
PDF
|
2DB1424R
2DD2150)
OT89-3L
OT89-3L
J-STD-020D
MIL-STD-202,
DS31329
621-2DB1424R-13
2DB1424R-13
P33R
2DB1424R
2DB14
|
TRANSISTOR p50
Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the
|
Original
|
PDF
|
eSHP170COB
eSHP170COB
eSHP170
eSHP170
AP-eSH-0005
TRANSISTOR p50
p13 transistor
P41 transistor
transistor p13
P40 transistor
p21 transistor
transistor P32 25
p23 transistor
transistor p31
transistor p11
|
transistor c3909
Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
|
Original
|
PDF
|
APPNOTE-006
transistor c3909
pt 2358
Voltmeter
Gan hemt transistor x band
of38dBm
transistor DB p16
CGH40025F
ID4002
Cree Microwave
Gan hemt transistor
|
transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
|
Original
|
PDF
|
CGH40025F
APPNOTE-006
transistor p98
P99 transistor
transistor nc p79
p88 transistor
Gan hemt transistor
100 p38 transistor
transistor be p88
p115
WR35
1/SMD bm p57
|
p331 TRANSISTOR
Abstract: K12B P331 XB1117 Transistor P331
Text: XB1117 Series ETR0315_005a 1A Low Dropout Positive Voltage Regulator •GENERAL DESCRIPTION The XB1117 series is 1A Bi-polar transistor LDO voltage regulator. Output voltage of the XB1117P series is fixed to 1.8V, 2.5V, 3.3V, and 5.0V. The XB1117K series output voltage is adjustable by the external resistors. Please refer to the absolute
|
Original
|
PDF
|
XB1117
ETR0315
XB1117P
XB1117K
XB1117P50
XB1117P18,
p331 TRANSISTOR
K12B
P331
Transistor P331
|
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: i_L N AMER P H I L I P S / D I S CR E T E bbSBTBl 0015251 1 □ bE D T RZ2833B45W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.
|
OCR Scan
|
PDF
|
RZ2833B45W
100/us;
bbS3131
D01535S
P-33-13
|
Untitled
Abstract: No abstract text available
Text: [ r b t5 3 i3 i DEVELOPMENT DATA d o n m a • MJE13006 MJE13007 Thf$ data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D p-33_ 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed glass-passivated npn power transistor in a TO-220 envelope, intended fo r use
|
OCR Scan
|
PDF
|
MJE13006
MJE13007
O-220
bb53T31
T-33-13
7Z2423Q
|
Untitled
Abstract: No abstract text available
Text: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.
|
OCR Scan
|
PDF
|
b3b72S4
P33-3
2C6052HV
2C6059HW
Rang1000
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP320,TLP320-2/TLP320-4 TENTATIVE TOSHIBA PHOTOCOUPLER Ti P33fi • ■ m m g Ti m ■ GaAs IRED & PHOTO-TRANSISTOR w Ti g m pun-d ■ «r v ■ TELECOMMUNICATION U n it in mm TLP320 <3 OFFICE MACHINE TELEPHONE USE EQUIPMENT rLI Lk. 1 2 icir 4,53 ± 0.25
|
OCR Scan
|
PDF
|
TLP320
TLP320-2/TLP320-4
P33fi
TLP320
TLP320,
TLP320-2
TLP320-4
150mA.
|
Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SC3987 r ' 3 5 ' 1 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2221A Use . Switching of L load motor driver, printer hammer driver, relay driver Features • High DC current gain . Large current capacity and wide ASO
|
OCR Scan
|
PDF
|
2SC3987
|
407f
Abstract: 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors
Text: PHILIPS INTE RNAT ION AL M5E D E3 711Qfi5ti OGaOôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators
|
OCR Scan
|
PDF
|
711Qfi5ti
BU406F
BU407F
OT186
1Q62b
3D64t.
407f
18150A
philips 3e3
eht transformer
bu 407 F TRANSISTOR
407F Transistors
|
l78s24ct
Abstract: L78S L78S12CT
Text: rZ Z Ä 7 # S G S -T H O M S O N L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A' ■ OUTPUT VOLTAGES O F5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 1 8 ; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION
|
OCR Scan
|
PDF
|
L78S00
L78S00
O-220
essenL78S00
l78s24ct
L78S
L78S12CT
|
2N515
Abstract: 2N5151 2N5153 bi 370 transistor 2N5152 2N5154 2N5663 SFT6800 SFT6900 transistor 359 AJ
Text: S O L I D ST AT E D E V I C E S INC 1SE D GOOEllb 1 PRELIMINARY DATA SHEET SFT6900 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 FEATURES
|
OCR Scan
|
PDF
|
3tt011
SFT6900
SFT6800
2N5663
2N515
2N5151
2N5153
bi 370 transistor
2N5152
2N5154
SFT6800
transistor 359 AJ
|
BUP101
Abstract: bup transistor A 671 transistor
Text: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2
|
OCR Scan
|
PDF
|
823SbD5
QDS13bci
BUP101
O-218
C67060-A1000-A2
01234s6789a10
r-33-/3
BUP101
bup transistor
A 671 transistor
|