TRANSISTOR P39 Search Results

TRANSISTOR P39 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P39 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SO692 Abstract: so692 equivalent SO642 transistor P39 Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2	Original	SO692 SO642 OT-23 SO692 so692 equivalent SO642 transistor P39	PDF
transistor P39 Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642	Original	SO692 OT-23 SO642 OT-23 transistor P39	PDF
transistor P39 Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s	Original	SO692 OT-23 SO642 OT-23 transistor P39	PDF
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS	Original	SO692 OT-23 SO642 OT-23	PDF
transistor P39 Abstract: small signal pnp SO642 SO692 4032C OC310 Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS	Original	SO692 OT-23 SO642 OT-23 transistor P39 small signal pnp SO642 SO692 4032C OC310	PDF
transistor P39 Abstract: SO642 SO692 4032C Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS	Original	SO692 OT-23 SO642 OT-23 -300icroelectronics. transistor P39 SO642 SO692 4032C	PDF
transistor P39 Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB	Original	SO692 SO642 OT-23 transistor P39	PDF
S0692 Contextual Info: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER	OCR Scan	S0692 S0642 OT-23 SC06810 OT-23 S0692	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
pnp high emitter base voltage 15 volt Abstract: LM195 DSOO5525-10 DSOO5525-12 LP395 LP395Z Z03A Contextual Info: Semiconductor LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast m onolithic transistor with com plete over load protection. This very high gain tra n sisto r has included on the chip, current limiting, pow er lim iting, and therm al	OCR Scan	LP395 LP395 pnp high emitter base voltage 15 volt LM195 DSOO5525-10 DSOO5525-12 LP395Z Z03A	PDF
transistor P39 Abstract: MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA Contextual Info: ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V BR CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2039F -600mV ZXTN2038F ZXTP2039FTA ZXTP2039FTC transistor P39 MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA	PDF
transistor f420 Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010 Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2	OCR Scan	2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010	PDF
BTN3904A3 Abstract: BTP3906A3 BTP3906N3 P3906 Contextual Info: CYStech Electronics Corp. Spec. No. : C318N3-H Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP3906A3 Description • High Cutoff Frequency. • Complementary to BTN3904A3. Symbol Outline	Original	C318N3-H BTP3906A3 BTN3904A3. BTP3906N3 UL94V-0 BTN3904A3 BTP3906A3 BTP3906N3 P3906	PDF

bcw 918 Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115 Contextual Info: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221	OCR Scan	O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115	PDF
transistor c3909 Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor	PDF
b175 transistor Abstract: b173 6DI75M-050 IS18 P460 T151 T810 Contextual Info: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools	OCR Scan	6DI75M-050 95t/R89 Shl50 b175 transistor b173 IS18 P460 T151 T810	PDF
Contextual Info: 2D I 150M-050 150 a Ä ± / < 7 - ie ^ a . - ; u : Outline Drawings POWER TRANSISTOR MODULE Features • f i S h FE H igh D C Current Gain • H igh Speed Sw itching : Applications • iF L ffl'fV / i —9 General Purpose Inverter • Uninterruptible Power Sup ply	OCR Scan	150M-050 I95t/R89)	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
Transistor B123 Abstract: H11S r6e2 T151 T760 b123 04 DA092 Contextual Info: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply	OCR Scan	II15IJÃ I95t/R89) Shl50 Transistor B123 H11S r6e2 T151 T760 b123 04 DA092	PDF
ETN36-O3O Contextual Info: ETN36-O3O 300a : O u tlin e D r a w in g s POWER TRANSISTOR MODULE • i f * : Features • High Current • hFE High DC Current Gain • Non Insulated Type : Applications High Power S w itching • U ninterruptible Power Supply • DC DC M o to r Controls	OCR Scan	ETN36-O3O l95t/R89 Shl50	PDF
Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200	PDF
Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200	PDF
30S3 Abstract: T930 transistor f460 Contextual Info: ETM36-O3O 200a : Outline Drawings POWER TRANSISTOR MODULE ' Features • * W fc High Current High DC Current Gain • Ii f e Non Insulated Type • f f l i i : A p p lica tio n s • X W J j X ' f "Jl- > 9 High Power Switching • Uninterruptible Power Supply	OCR Scan	ETM36-O3O 19S24^ I95t/R69) 30S3 T930 transistor f460	PDF

TRANSISTOR P39 Search Results

TRANSISTOR P39 Result Highlights (5)

TRANSISTOR P39 Datasheets Context Search

SO692

transistor P39

transistor P39

transistor P39

transistor P39

transistor P39

S0692

sx3704

XC6SLX16-CSG324

pnp high emitter base voltage 15 volt

transistor P39

transistor f420

BTN3904A3

bcw 918

transistor c3909

b175 transistor

transistor p98

Transistor B123

ETN36-O3O

30S3