TRANSISTOR P58 Search Results

XC6SLX16-CSG324

Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller

FCX458

Abstract: FCX558 FZT558 DSA003685
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

FCX558TA

Abstract: FCX458
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -MARCH 1996 FEATURES * 400 V o lt V,CEO * P, 1 W a tt CO M PLEM ENTARY TYPE - FCX458 PARTM ARKING DETAIL - P58 ABSOLUTE MAXIMUM RATINGS, SYMBOL PARAMETER Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Collector-Base Voltage

SEM 2004

Abstract: P5806NVG
Contextual Info: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

tlp582

Contextual Info: TO SHIBA TLP582 TOSHIBA PHOTOCOUPLER GaA€As IRED & PHOTO 1C T L P58 2 MOS FET GATE DRIVER U n it in mm TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a G aA €A s lig h t em itting diode and 18,9 ±0.3 integrated high gain, high speed photodetector.

Contextual Info: SOT89 PNP SIUCON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M ARCH 1996_ FEA TU R ES * 400 V o lt VCE0 * Ptot= 1 W att C O M PLEM EN TA R Y T Y P E - FC X458 PA RTM A RKIN G D ET A IL - P58 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL

Contextual Info: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA

P5* RF SOT89

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M A R C H 1996 _ FEATURES * 400 V olt V,CEO P,or 1 W att C O M P LEM EN T A R Y TYPE - FCX458 P A R T M A R K IN G D E T A IL - P58 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage

marking P58

Abstract: FCX558TA transistor p58 sot89 package
Contextual Info: A Product Line of Diodes Incorporated FCX558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

transistor c3909

Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

transistor p98

Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

V23990-P588-A

Abstract: V23990-P588 tyco igbt 1200V
Contextual Info: V23990-P588-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P586-A

Contextual Info: V23990-P586-A target datasheet flow PIM 1 2nd gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P585-A

Abstract: V23990-P585
Contextual Info: V23990-P585-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P584

Abstract: V23990-P584-A
Contextual Info: V23990-P584-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P580

Abstract: V23990-P580-A tyco igbt 1200V
Contextual Info: V23990-P580-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P589-A

Abstract: tyco igbt 1200V 36Ohm ND transistor igbt tyco
Contextual Info: V23990-P589-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

V23990-P589-A41-PM

Abstract: V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM
Contextual Info: V23990-P589-A41-PM target datasheet flowPIM 1 3rd gen 1200V/25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour Target Applications

Contextual Info: V23990-P589-A31-PM preliminary datasheet flowPIM 1 3rd gen 1200V / 25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT2 phantom speed / EmCon4 technology ● Lower losses than IGBT3 or 4 for fsw > 8kHz

Industrial Drives

Abstract: Embedded Drives P586A
Contextual Info: V23990-P586-*2*-PM flow PIM 1 600V/50A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses Solder pins and improved EMC behaviour Target Applications

P589A41

Abstract: P589A4 P589A
Contextual Info: V23990-P580-*4*-PM flow PIM 1 1200V/35A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses and improved EMC behaviour 12mm housing Solder pins