XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
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DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
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FCX458
Abstract: FCX558 FZT558 DSA003685
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FCX558
FCX458
-50mA,
-100mA,
-10mA,
20MHz
-100V
FCX458
FCX558
FZT558
DSA003685
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FCX558TA
Abstract: FCX458
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FCX458
FCX558
-10mA*
-320V;
-20mA,
-50mA,
-100mA,
FCX558TA
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FCX558
FCX458
-50mA,
-100mA,
-10mA,
20MHz
-100V
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Collector-Base Voltage
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FCX558
FCX458
-100m
-100V
FZT558
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SEM 2004
Abstract: P5806NVG
Text: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P5806NVG
Oct-01-2004
SEM 2004
P5806NVG
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA
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FCX555
-150V
-180V
-700mA
-300mV
-100mA
FCX495
AEC-Q101
J-STD-020
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marking P58
Abstract: FCX558TA transistor p58 sot89 package
Text: A Product Line of Diodes Incorporated FCX558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA
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FCX558
-400V
-200mA
-200mV
-20mA
FCX458
AEC-Q101
J-STD-020
MIL-STD-202,
FCX558
marking P58
FCX558TA
transistor p58 sot89 package
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transistor c3909
Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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APPNOTE-006
transistor c3909
pt 2358
Voltmeter
Gan hemt transistor x band
of38dBm
transistor DB p16
CGH40025F
ID4002
Cree Microwave
Gan hemt transistor
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transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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CGH40025F
APPNOTE-006
transistor p98
P99 transistor
transistor nc p79
p88 transistor
Gan hemt transistor
100 p38 transistor
transistor be p88
p115
WR35
1/SMD bm p57
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V23990-P588-A
Abstract: V23990-P588 tyco igbt 1200V
Text: V23990-P588-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P588-A
52Ohm
thikness50um
Dicke50um
D81359
V23990-P588-A
V23990-P588
tyco igbt 1200V
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V23990-P586-A
Abstract: No abstract text available
Text: V23990-P586-A target datasheet flow PIM 1 2nd gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P586-A
40-limited
68Ohm
D81359
thikness50um
Dicke50um
V23990-P586-A
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V23990-P585-A
Abstract: V23990-P585
Text: V23990-P585-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P585-A
40-limited
68Ohm
D81359
thikness50um
Dicke50um
V23990-P585-A
V23990-P585
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V23990-P584
Abstract: V23990-P584-A
Text: V23990-P584-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P584-A
68Ohm
D81359
thikness50um
Dicke50um
V23990-P584
V23990-P584-A
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V23990-P589-A
Abstract: tyco igbt 1200V 36Ohm ND transistor igbt tyco
Text: V23990-P589-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P589-A
40-limited
52Ohm
thikness50um
Dicke50um
D81359
V23990-P589-A
tyco igbt 1200V
36Ohm
ND transistor
igbt tyco
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V23990-P589-A41-PM
Abstract: V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM
Text: V23990-P589-A41-PM target datasheet flowPIM 1 3rd gen 1200V/25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour Target Applications
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V23990-P589-A41-PM
200V/25A
V23990-P589-A41-PM
V23990-P589-A
vinco
flowpim
V23990-P589-A41
061W
vincotech flowPIM
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Untitled
Abstract: No abstract text available
Text: V23990-P589-A31-PM preliminary datasheet flowPIM 1 3rd gen 1200V / 25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT2 phantom speed / EmCon4 technology ● Lower losses than IGBT3 or 4 for fsw > 8kHz
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V23990-P589-A31-PM
30kHz
16kHz)
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Industrial Drives
Abstract: Embedded Drives P586A
Text: V23990-P586-*2*-PM flow PIM 1 600V/50A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses Solder pins and improved EMC behaviour Target Applications
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V23990-P586-
00V/50A
V23990-P586-A20-PM
V23990-P586-A20Y-PM
V23990-P586-A208-PM
V23990-P586-C20-PM
V23990-P586-C20Y-PM
Industrial Drives
Embedded Drives
P586A
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P589A41
Abstract: P589A4 P589A
Text: V23990-P580-*4*-PM flow PIM 1 1200V/35A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses and improved EMC behaviour 12mm housing Solder pins
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V23990-P580-
200V/35A
V23990-P580-A41-PM
V23990-P580-A41Y-PM
V23990-P580-A418-PM
V23990-P580-C41-PM
V23990-P580-C41Y-PM
P589A41
P589A4
P589A
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -MARCH 1996 FEATURES * 400 V o lt V,CEO * P, 1 W a tt CO M PLEM ENTARY TYPE - FCX458 PARTM ARKING DETAIL - P58 ABSOLUTE MAXIMUM RATINGS, SYMBOL PARAMETER Collector-Base Voltage Collector-Em itter Voltage
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FCX458
-100nA
-320V;
-50mA,
-10mA,
VrE---20V
20MHz
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tlp582
Abstract: No abstract text available
Text: TO SHIBA TLP582 TOSHIBA PHOTOCOUPLER GaA€As IRED & PHOTO 1C T L P58 2 MOS FET GATE DRIVER U n it in mm TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a G aA €A s lig h t em itting diode and 18,9 ±0.3 integrated high gain, high speed photodetector.
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TLP582
TLP582
Transi20
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SIUCON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M ARCH 1996_ FEA TU R ES * 400 V o lt VCE0 * Ptot= 1 W att C O M PLEM EN TA R Y T Y P E - FC X458 PA RTM A RKIN G D ET A IL - P58 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL
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FCX558
-50mA,
VCE--10V*
idth-300
FZT558
00DT2S7
-20mA,
-100mA,
-10mA,
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P5* RF SOT89
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M A R C H 1996 _ FEATURES * 400 V olt V,CEO P,or 1 W att C O M P LEM EN T A R Y TYPE - FCX458 P A R T M A R K IN G D E T A IL - P58 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage
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FCX558
FCX458
-320V;
-20mA,
-50mA,
FZT558
P5* RF SOT89
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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