TRANSISTOR P8 Search Results

TRANSISTOR P8 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MO178 Abstract: 0118 transistor MO-178BA Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-8 0.20 (0.008) M CL P8.064 C VIEW C 8 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b INCHES SYMBOL 8 6 7 5 CL CL E 1 2 3 E1 MILLIMETERS MAX MIN MAX NOTES A 0.036	Original	OT23-8) 5M-1994. SC-74 MO178BA. MO178 0118 transistor MO-178BA	PDF
transistor 5d Abstract: BC808W 5H MARKING BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W Contextual Info: P jjjN p ^ e n jjÇ o n d u c to i« ^ Ç ^ 7 1 1 □ fi 2 b QObf lMOT 3Tfl H P H IN PNP general purpose transistor FEATURES ^^P\|j°duc^P8çfficatlon BC807W; BC808W PIN CONFIGURATION • High current • S-m ini package. DESCRIPTION PNP transistor in a plastic SOT323	OCR Scan	711002b BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W BC807-40W transistor 5d BC808W 5H MARKING BC807W BC808-16W BC808-25W BC808-40W	PDF
transistor marking P8 Abstract: transistor p8 LDTA123YLT1G LDTA123YLT3G Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an	Original	LDTA123YLT1G OT-23 transistor marking P8 transistor p8 LDTA123YLT1G LDTA123YLT3G	PDF
transistor marking P8 Abstract: LDTA123YWT1G Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an	Original	LDTA123YWT1G transistor marking P8 LDTA123YWT1G	PDF
LDTA123YET1G Abstract: transistor marking P8 SC-89 Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an	Original	LDTA123YET1G SC-89 -200m -100m 463C-01 463C-02. LDTA123YET1G transistor marking P8 SC-89	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
transistor 81 110 w 63 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	MRF581 transistor 81 110 w 63	PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
T12N50 Abstract: 69 PIC transistor Contextual Info: ZETEX ZXT12N50DX SuperS0T4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=50V; Rsat = 45m il; lc= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assembly techniques to give	OCR Scan	ZXT12N50DX T12N50 69 PIC transistor	PDF
HPA1816 Abstract: HPA1816GR-9JG JUPA1816 PA1816 2002CP Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR juPA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The \|o.PA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and	OCR Scan	uPA1816 PA1816 HPA1816 HPA1816GR-9JG JUPA1816 2002CP	PDF

d128 Abstract: PA1852 uPA1852 diode oa 90 Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 2 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1852 is a switching device which can be driven directly by a 2.5-V power source.	OCR Scan	uPA1852 D12803EJ1V0DS00 PA1852 d128 PA1852 diode oa 90	PDF
MRF966 Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R Contextual Info: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier	OCR Scan	MRFG9661/D MRFG9661/9661R MRFG9661/D MRF966 MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R	PDF
Contextual Info: um ZXT12P12DX u p e rS O T 4 UAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR UMMARY ceo=-12V; Rsat = 47 m il; lc= -3A ESCRIPTION his new 4th generation ultra low saturation transistor utilises the Zetex atrix structure com bined with advanced assem bly techniques to give	OCR Scan	ZXT12P12DX ZXT12P	PDF
BFG92AW Abstract: transistor marking P8 Contextual Info: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR	OCR Scan	BFG92AW BFG92AW/X; BFG92AW/XR OT343 OT343R BFG92AW/X BFG92AW/XR BFG92AW BFG92AW/X transistor marking P8	PDF
D86DL2 Abstract: IRF130 CPD75 Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 14.0 AMPERES	OCR Scan	IRF130 D86DL2 250MA, Rds10Ni CPD75	PDF
Xr 1075 Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320 Contextual Info: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic	OCR Scan	BFG92A; BFG92A/X; BFG92A/XR BFG92 OT143 BFG92A BFG92A/X MSB014 OT143. Xr 1075 BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320	PDF
Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	MT4S102T	PDF
transistor p89 Abstract: transistor be p89 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT FCX589 FMMT549 DSA003667 Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30	Original	FCX589 -100mA* -200mA* -500mA, -100mA, 100MHz FMMT549 transistor p89 transistor be p89 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT FCX589 DSA003667	PDF
Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	MT4S102T	PDF
transistor p89 Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30	Original	FCX589 -100mA* -200mA* -500mA, -100mA, 100MHz FMMT549 transistor p89	PDF

TRANSISTOR P8 Search Results

TRANSISTOR P8 Result Highlights (5)

TRANSISTOR P8 Datasheets Context Search

MN1280

oz960

MO178

transistor 5d

transistor marking P8

transistor marking P8

LDTA123YET1G

2N2222A 338

y51 h 120c

sx3704

transistor 81 110 w 63

XC6SLX16-CSG324

T12N50

HPA1816

d128

MRF966

BFG92AW

D86DL2

Xr 1075

transistor p89

transistor p89