TRANSISTOR PT 42 Search Results

LC 3524

Abstract: ic 3524 I2 200 LB-22 ic LC 3524
Contextual Info: BIG IDEAS IN BIG POWER ” • PowerTech 90 AMPERE TRANSISTOR PT-3523 PT-3524 FEATURES PT-3523 PT-3524 Vceo . 4 0 0 V . 450V Vcb0 . 4 5 0 V . 500V

LC 3524

Abstract: ic 3524 ic LC 3524
Contextual Info: BIG IDEAS IN PowerTech BIG POWER ” • 9 0 AMPERE TRANSISTOR PT-3523 PT-3524 FEATURES PT-3523 PT-3524 Vceo. 4 0 0 V . Vcb0 . 4 5 0 V . Veb0. 10V

LC 3524

Abstract: 1b18a powertech ic 3524 L68J LC90A PT-3523 PT-3524 TG-63 transistor 2sc 791
Contextual Info: 1?E D TSiflTbM GaDOaeS M POIilERTECH “BIG IDEAS IN • IN C P bi g p o w e r" o w e mmm r T e m c h 9 0 AMPERE TRANSISTOR T -3 3 -1 5 PT-3523 PT-3524 FEATURES Vceo PT-3523 PT-3524 400V . 450V Vcb0 . 4 5 0 V . 500V

Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical

2SC5454

Abstract: ic n 3856
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW

Contextual Info: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (lc =500mA) Complementary to SS9012 Excellent hFE linearity.

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

avantek

Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Contextual Info: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz

NE46734

Abstract: cm3x sot89 "NPN TRANSISTOR"
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SA1627A PNP SILICON TRANSISTOR PN P EPI T AX I AL SI LI CON T RAN SI ST OR 1 ̈ TO-252 DESCRI PT I ON The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 ̈ TO-126 FEAT U RES * High voltage

powertech

Contextual Info: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A

2SK514

Abstract: d1352 C982 M-0258 MA 7824 T460-8525 FT010 ra022 2sk514 transistor transistor 2sk514
Contextual Info: iM u m y ? > > * * Junction Field Effect Transistor 2SK514 * at H M W W t i L l m • 4.0 ± 0 .1 I 1 .0 * 0 ,2 T a =25 bC) K r - h • k h r - > n n * flE 4 r - > * h £ m m -50 V Vqso -50 V Vpsx * 50 V at Id 20 raA « Ig 10 mA * Pt 250 mW Tj 125 X > ; x a > a #

Triode MARKING 048

Abstract: 421f 2N4854 2N3838 2N4854U JANTXV 2N4854
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 November 2001. INCH-POUND MIL-PRF-19500/421F 25 August 2001 SUPERSEDING MIL-PRF-19500/421E 2 April 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,

2N3838

Abstract: 2N4854 2N4854U IC tl 072
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 12 January 2009. MIL-PRF-19500/421G w/AMENDMENT 1 12 October 2009 SUPERSEDING MIL-PRF-19500/421G 14 March 2004 PERFORMANCE SPECIFICATION SHEET

2N4854

Abstract: 2n4854 to-78 transistor f 421 TO-78 microsemi
Contextual Info: 2N4854 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for

Contextual Info: 2N4854 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for

2N4854

Contextual Info: 2N4854U Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854U device in a low profile 6-pin U package is military qualified up to a JANTXV

2N3838

Contextual Info: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for

Contextual Info: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for

Contextual Info: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

Contextual Info: 2N4854U Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN/PNP Silicon Complementary Small Signal Dual Transistor Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854U device in a low profile 6-pin U package is military qualified up to a JANTXV

MIL-STD-1686

Abstract: LP1500 LP1500SOT223 P100 noise gate compression
Contextual Info: Filtronic LP1500SOT223 Low Noise, High Linearity Packaged PHEMT Solid State FEATURES • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range

D44R4

Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

2N5305

Abstract: 2N5356 BC pnp 200mA npn 940 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN