transistor marking DG
Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one
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OT363
SC-88)
AEC-Q101
transistor marking DG
TRANSISTOR SMD MARKING CODE pa
marking code DG SMD Transistor
dg transistor smd
NXP SMD TRANSISTOR MARKING CODE
SMD transistor code 132
transistor smd code marking 101
transistor smd code marking 102
TRANSISTOR SMD CODE PACKAGE SOT363
marking code BV SMD Transistor
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Untitled
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
SMBT3904PN
OT363
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SC74
Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
OT363
SC74
SMBT3904
SMBT3904PN
SMBT3904UPN
6C TRANSISTOR MARKING
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Marking Package Code TF
Abstract: No abstract text available
Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBT3904.
SMBT3904PN
SMBT3904UPN
EHA07177
SMBT3904PN
OT363
Marking Package Code TF
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Untitled
Abstract: No abstract text available
Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101
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SMBTA06UPN
EHA07177
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MARKING CODE CCB
Abstract: infineon marking W1s marking code w1s SC74 SMBTA06UPN
Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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SMBTA06UPN
EHA07177
MARKING CODE CCB
infineon marking W1s
marking code w1s
SC74
SMBTA06UPN
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MJD127G
Abstract: No abstract text available
Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR
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MJD122,
NJVMJD122
MJD127,
NJVMJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD127G
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Abstract: No abstract text available
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES
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MJD122,
NJVMJD122T4G
MJD127
2N6040â
2N6045
TIP120â
TIP122
TIP125â
TIP127
MJD122/D
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NSVMUN5333
Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
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MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GSeries
MUN5311DW1T1G
OT-363
MUN5311DW1T1/D
NSVMUN5333
SMUN5311DW1T1G
NSVMUN5333DW1T1G
Transistor BFR 93
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MJD122
Abstract: TIP125-TIP127 mjd122g
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES
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MJD122,
NJVMJD122T4G
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD122
mjd122g
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Transistor BFR 93
Abstract: No abstract text available
Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
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MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1Gâ
MUN5311DW1T1G
MUN5311DW1T1/D
Transistor BFR 93
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transistor marking 7D
Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
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MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1GSeries
MUN5211DW1T1G
OT-363
MUN5211DW1T1/D
transistor marking 7D
MUN5214DW1T1G
SMUN5213DW1T1G
transistor marking code 7e
SOT363 MARKING CODE 7M
SMUN5235DW1T1G
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Abstract: No abstract text available
Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a
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MUN5111DW1T1G
SMUN5111DW1T1G
OT-363
MUN5111DW1T1/D
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Ie 49 transistor
Abstract: SMUN5312DW1T1G mun5335dw1t1g SMUN5330DW1T1G
Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
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MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GSeries
MUN5311DW1T1G
OT-363
MUN5311DW1T1/D
Ie 49 transistor
SMUN5312DW1T1G
mun5335dw1t1g
SMUN5330DW1T1G
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Untitled
Abstract: No abstract text available
Text: 2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board
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2SC5658M3T5G,
2SC5658RM3T5G
OT-723
inch/3000
2SC5658M3/D
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NSBA113EDXV6T1
Abstract: No abstract text available
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA114EDXV6/D
NSBA113EDXV6T1
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Untitled
Abstract: No abstract text available
Text: PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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PZT2222A,
SPZT2222A
PZT2907AT1
PZT2222AT1/D
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Abstract: No abstract text available
Text: PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com
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PZT2907A
OT-223
PZT2222AT1
AEC-Q101
PZT2907AT1/D
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Abstract: No abstract text available
Text: PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features
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PZT2222A
OT-223
PZT2907AT1
PZT2222AT1/D
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Abstract: No abstract text available
Text: BCP68T1G, SBCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
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BCP68T1G,
SBCP68T1G
BCP68T1/D
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Abstract: No abstract text available
Text: BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features
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BCP68T1G
BCP69T1
BCP68T1/D
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Abstract: No abstract text available
Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount
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PZT2907AT1,
SPZT2907AT1G
OT-223
PZT2222AT1
OT-223
PZT2907AT1/D
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sot-223 body marking D K Q F
Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount
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PZT2907AT1,
SPZT2907AT1G
OT-223
PZT2222AT1
AEC-Q101
PZT2907AT1/D
sot-223 body marking D K Q F
transistor P2F
on semiconductor p2f
SPZT2907AT1G
p2F 45
sot-223 body marking A G
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Abstract: No abstract text available
Text: b3b?254 Q101b32 TS7 • M O T b Order this data sheet by PZT651T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
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Q101b32
PZT651T1/D
PZT651T1
OT-223
PZT751T1
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