TRANSISTOR R 405 Search Results

TRANSISTOR R 405 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR R 405 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
MRF325 Abstract: BH rn transistor Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON	OCR Scan	MRF325 MRF325 BH rn transistor	PDF
IR2E27A Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 Contextual Info: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r	OCR Scan	24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28	PDF
MJE12007 Abstract: 221A-04 MJE-12007 Contextual Info: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô \| T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white	OCR Scan	MJE12007 MJE12007 221A-04 MJE-12007	PDF
BD132 Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132 Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.	OCR Scan	BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132	PDF
Contextual Info: N AMER P H IL IP S /D IS C R E T E bRE D • b b 5 3 R 31 Philips Sem iconductors D 0 3 0 7 1 D 035 H A P X Product Specification BUK457-600B Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK457-600B bbS3T31	PDF
2N5672 Abstract: 5671 2N5671 2n transistor high Contextual Info: 2N 5671 2N 5672 NPN S ILIC O N T R A N S IS T O R S ,E P IT A X IA L COLLECTOR T R A N S IS T O R S S I L I C I U M , N P N C O L L E C T E U R E P I T A X IE - High speed, high current, high power transistor Transistor de puissance rapide fo rt courant i 90 V	OCR Scan	CB-19 2N5672 5671 2N5671 2n transistor high	PDF
402P Contextual Info: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma	OCR Scan	100MHZ 402P	PDF
TF230 Abstract: NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY Note	Original	NP50P04KDG NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY O-263 MP-25ZK) O-263) TF230 NP50P04KDG-E1-AY NP50P04KDG-E2-AY	PDF
NP50P06KDG Abstract: NP50P06KDG-E1-AY NP50P06KDG-E2-AY Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY Note	Original	NP50P06KDG NP50P06KDG NP50P06KDG-E1-AY NP50P06KDG-E2-AY O-263 MP-25ZK) O-263) NP50P06KDG-E1-AY NP50P06KDG-E2-AY	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
Contextual Info: r s T SGS-THOMSON m 7M ^OœiLI^TriOiOOi BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PR EFER RED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAM ETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION	OCR Scan	BULK128D C6949D SC-0351	PDF
transistor KSA Abstract: AF109R Contextual Info: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .	OCR Scan	Q60106-X109-R1 Q004QS? AF109R transistor KSA AF109R	PDF

2sd313 equivalent Abstract: 2SD313 Contextual Info: DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28	Original	2SD313 O-220AB 2sd313 equivalent 2SD313	PDF
MJE2955T Contextual Info: DC COMPONENTS CO., LTD. R MJE2955T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28	Original	MJE2955T O-220AB -400mA -500mA, MJE2955T	PDF
MJE3055T Abstract: 890 f 562 ic transistor MJE3055T Contextual Info: DC COMPONENTS CO., LTD. R MJE3055T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28	Original	MJE3055T O-220AB 400mA 500mA, MJE3055T 890 f 562 ic transistor MJE3055T	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
TIP125 Contextual Info: DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base	Original	TIP125 O-220AB -100mA -12mA -20mA -500mA, TIP125	PDF
LB125E Contextual Info: DC COMPONENTS CO., LTD. LB125E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for lighting applications and switch mode power supplies. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base 2 = Collector	Original	LB125E O-220AB LB125E	PDF
2sd880 equivalent Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR Contextual Info: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)	Original	2SD880 O-220AB 2sd880 equivalent 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR	PDF
LB124E Abstract: Ic 749 lb124 Contextual Info: DC COMPONENTS CO., LTD. LB124E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base	Original	LB124E O-220AB 100MHz LB124E Ic 749 lb124	PDF

TRANSISTOR R 405 Search Results

TRANSISTOR R 405 Result Highlights (5)

TRANSISTOR R 405 Datasheets Context Search

2sb504

la 4440 amplifier circuit diagram 300 watt

MRF325

IR2E27A

MJE12007

BD132

2N5672

402P

TF230

NP50P06KDG

transistor vergleichsliste

transistor KSA

2sd313 equivalent

MJE2955T

MJE3055T

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

TIP125

LB125E

2sd880 equivalent

LB124E