TRANSISTOR R 606 J Search Results

vhf high gain transistor

Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
Contextual Info: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i

transistor r 606 j

Abstract: transistor s46 sfh606 opto coupling transistor Siemens S35
Contextual Info: SIEMENS C M P N T S i OPTO MME D Ô23fe>32b QOGSGbti 5 B S I E X SIEMEMS SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR •Hl- S3 Package Dimensions In Inches mm •307 (7.B) .291 (7.4) 1 .256(6.5) 548(6.3) E E E 1 a 3 3 Ï J base MO D E E

B550 transistor

Abstract: SFH606
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E J> • SIEM ENS fl23Sb05 0 0 2 7 2 fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%

B550 transistor

Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%

LZ2316AJ

Abstract: 500C LZ2316AR
Contextual Info: SHARP SPEC No. ISSUE: E L 0 9 9 1 6 5 A Jan. 29 1998 To ; S P E C I F I C A T I O N S Product Type Model No. 1/3 type solid state B/W imaging device for EIA system Versatile output for mirror and normal image LZ2316AJ (LZ2316AR) j&This specifications contains 22 pages including the cover and appendix.

DH320

Abstract: LZ2416J
Contextual Info: SHARP SPEC No. ISSUE: E L 0 9 9 2 4 0 A Oct. 29 1997 To ; REFERENCE S P Product Type Model No. E C I F I C A T T O N S 1/4 type solid state B/W imaging device for EIA system Versatile output for mirror and normal image LZ2 4 1 6 J ^ T h i s specifications contains 22 pages including the cover and appendix.

transistor pr 606 j

Abstract: fah1 13B1 LR38585 LZ2316AR
Contextual Info: SHARP LZ2316AR BACK LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels

2SC4627

Abstract: LR38585 LZ2316AR T1RD2
Contextual Info: BACK LZ2316AR LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION PIN CONNECTIONS The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels

LR38580

Abstract: LZ2315A LZ2316AR LZ2315 T1RD2
Contextual Info: LZ2315A/LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type CCD Area Sensors with 270 k Pixels LZ2315A/ LZ2316AR DESCRIPTION PIN CONNECTIONS The LZ2315A/LZ2316AR are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices) driven

TOP 242 PN

Abstract: 2SC4627 2SC4716 LR38580 LZ2416J
Contextual Info: LZ2416J LZ2416J Dual-power-supply 5 V/12 V Operation 1/4-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION PIN CONNECTIONS The LZ2416J is a 1/4-type (4.5 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply . With approximately 270 000 pixels

B159 diode

Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Contextual Info: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s

Contextual Info: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0

DS11

Abstract: g10q
Contextual Info: ^¡IB5 DT451 A N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /L IT E M ÏI7 I PO W E R S E M IC O N D U C TO R I Features High Cell Density DMOS Technology Low O n-State R esistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance

Contextual Info: Transistors I NPN General Purpose Transistor B C 848B W /B C 848B /B C 848C • F e a tu re s • E x te rn a l dim ensions <Units : mm 1 ) B V ceo< 3 0V 0c= 1m A) BC848BW 2 J C o m p le m e n ts the B C 8 5 8 6 /B C 8 5 8 B W . • P a c k a g e , marking and packaging specifications

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

photo transistor MEL 11

Contextual Info: SHARP ELEK/ M E LE C 1SE D IV 0 § a i â Q 7 <l â 0 0 Û1 S T 7 1 I LZ2111J C C D Area Sensor for 1 /2" N TSC Color T-41-55 LZ2111J • CCD Area Sensor for 1/2" NTSC Color Description Pin Connections The LZ2111J is a 1/2 inch solid-state image sensor comprised of PN-junction photodiodes and

6D120C-050

Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a

Contextual Info: T D Digital transistor, NPN, with 2 resistors 1 2 3 E K Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTD123EK; F22 DTD123EK (SMT3) r a built-in bias resistor allows inverter circuit configuration without external

2SD588

Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2n5088 transistor

Abstract: mps8097 2N5088 LC100A I2921 MPS-8097
Contextual Info: . SAMSUNG SEMI C O NDU CT OR INC MPS8097 14E D | 7^4142 000733b 5 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C oltector-Em ltter Voltage: Vc*o=40V • C o lle cto r D issipa tion : P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic

KSP44

Abstract: LB 0,5 mA transistor LA 350 npn transistor 400V KSP45 transistor KSP44
Contextual Info: NPN EXITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAGE TRANSISTOR • Colleclor-Emitter Voltage: VCE0 = KSP44: 400V KSP45: 350V • Collector Dissipation: Pc max = 625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit K SP44 500 V K SP45 400 V K SP44 400 V

6d120c-050

Abstract: 6d150c-050 1DI500A-030 6D115A-050 6D175A-050 all type transistor equivalent 6DI30B-050 m605 6D130A-120 6D130A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

6d120c-050

Abstract: 6D175A-050 6d150c-050 1DI500A-030 6D115A-050 6DI30B-050 6D130A-120 all type transistor equivalent M605 6D130A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.