TRANSISTOR R10 Search Results

TRANSISTOR R10 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR R10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
1BW TRANSISTOR Abstract: transistor BU 110 diode sg 69 Contextual Info: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK	OCR Scan	34G32T7 JD00244 34D32CI7 1BW TRANSISTOR transistor BU 110 diode sg 69	PDF
2SAR522EB Abstract: 2sar522m Contextual Info: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications	Original	2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A	PDF
Contextual Info: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications	Original	2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522UB R1010A	PDF
Contextual Info: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications	Original	2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A	PDF
2SCR522M Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC	Original	2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A	PDF
Contextual Info: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver	Original	2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523UB 2SAR523M 2SAR523EB R1010A	PDF
2SAR523EB Abstract: 2SCR523 Contextual Info: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver	Original	2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A 2SCR523	PDF
2SCR522M Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC	Original	2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522UB R1010A	PDF
Contextual Info: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver	Original	2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A	PDF
Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC	Original	2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A	PDF
2SCR523 Abstract: 2SCR523EB Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB	Original	2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523UB R1010A 2SCR523	PDF
Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB	Original	2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A	PDF
Contextual Info: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB	Original	2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A	PDF

tyco igbt Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit Contextual Info: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P361-F D81359 tyco igbt P361 ntc thermistor 500 ohm SPWM Inverter circuit	PDF
P364 Abstract: tyco igbt V23990-P364-F Contextual Info: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P364-F Tj150 D81359 P364 tyco igbt V23990-P364-F	PDF
tyco igbt Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter Contextual Info: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P360-F Tj150 D81359 tyco igbt SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter	PDF
sc 6038 Abstract: tyco igbt p363 Contextual Info: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P363-F D81359 sc 6038 tyco igbt p363	PDF
tyco igbt Abstract: V23990-P365-F 600v 30 kHz IGBT Contextual Info: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P365-F D81359 tyco igbt V23990-P365-F 600v 30 kHz IGBT	PDF
philips ferroxcube 4c6 Abstract: BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1	Original	BLF278 OT262A1 philips ferroxcube 4c6 BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36	PDF
ntcthermistor Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502 Contextual Info: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	-100A/ms -200A/ms D-81359 ntcthermistor V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502	PDF
p367 Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001 Contextual Info: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17	Original	V23990-P367-F Tj150 D81359 p367 tyco igbt 1200V p367 diode tyco igbt R120 HP1001	PDF
philips Trimmers 60 pf Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor	Original	BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun	PDF
Contextual Info: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition	Original	V23990-P434-F-PM D81359	PDF

TRANSISTOR R10 Search Results

TRANSISTOR R10 Result Highlights (5)

TRANSISTOR R10 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

1BW TRANSISTOR

2SAR522EB

2SCR522M

2SAR523EB

2SCR522M

2SCR523

tyco igbt

P364

tyco igbt

sc 6038

tyco igbt

philips ferroxcube 4c6

ntcthermistor

p367

philips Trimmers 60 pf