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    TRANSISTOR R2A Search Results

    TRANSISTOR R2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MM-222

    Abstract: photo flash capacitor
    Text: AMOS TECHNOLOGY LIMITED R2a MM222 LIGHT-SENSE WITH LED DRIVER by external photo transistor DATA SHEET FEATURES • • • • • • • Wide battery operating voltage range : 2.4V to 5.1V. Typical operating current : 100uA, VDD = 3.0V. Flashing LED upon valid detection


    Original     		PDF MM222 100uA, 50/60Hz) MM222 500ms MM-222 photo flash capacitor

    transistor 131 8D

    Abstract: TRANSISTOR MARKING CODE R2A 2N3906 UMT3906 2n3906 hie 2n3906 transistors transistor 2n3906 2N3904 MMST3904 MMST3906
    Text: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 !External dimensions Units : mm !Features 1) BVCEO < -40V (IC=-1mA) 2) Complements the UMT3904 / SST3904 / MMST3904 / 2N3904. 2.0±0.2


    Original     		PDF UMT3906 SST3906 MMST3906 2N3906 UMT3904 SST3904 transistor 131 8D TRANSISTOR MARKING CODE R2A 2N3906 2n3906 hie 2n3906 transistors transistor 2n3906 2N3904 MMST3904

    umt3906

    Abstract: TRANSISTOR MARKING CODE R2A Marking r2a MMST3906W T3904 MMST3906 SST3906 T106 T116 T146
    Text: UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 zDimensions Unit : mm zFeatures 1) BVCEO > −40V (IC= −1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. UMT3906 (1) Emitter (2) Base (3) Collector


    Original     		PDF UMT3906/SST3906/MMST3906 UMT3906 SST3906 MMST3906 T3904/SST3904/MMST3909. UMT3906 SC-70 SST3906 TRANSISTOR MARKING CODE R2A Marking r2a MMST3906W T3904 MMST3906 T106 T116 T146

    BF180

    Abstract: 250N HA5013 MM5013 HARRIS SEMICONDUCTOR
    Text: Harris Semiconductor No. MM5013.1 Harris Linear May 1996 HA5013 SPICE Macromodel CFA Authors: Ronald Mancini and Chris Henningsen Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to


    Original     		PDF MM5013 HA5013 1-800-4-HARRIS BF180 250N HARRIS SEMICONDUCTOR

    Mancini* CFA

    Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104
    Text: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to


    Original     		PDF MM5023 HA5023 1-800-4-HARRIS Mancini* CFA 250N HARRIS SEMICONDUCTOR Mancini DP104

    Mancini

    Abstract: Mancini* CFA 250N HA5025 HARRIS SEMICONDUCTOR MM5025
    Text: Harris Semiconductor No. MM5025.1 Harris Linear September 1996 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to


    Original     		PDF MM5025 HA5025 1-800-4-HARRIS Mancini Mancini* CFA 250N HARRIS SEMICONDUCTOR

    Mancini* CFA

    Abstract: 250N HA5025 BF180
    Text: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to


    Original     		PDF MM5025 HA5025 1-800-4-HARRIS Mancini* CFA 250N BF180

    Transistor 2Ay

    Abstract: PNP 2ay 2AY SOT-23
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, -10mA, -50mA, Transistor 2Ay PNP 2ay 2AY SOT-23

    marking c14a

    Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001

    250N

    Abstract: HA5022
    Text: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order


    Original     		PDF MM5022 HA5022 250N

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    250N

    Abstract: HA5024 BF180 dp104
    Text: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order


    Original     		PDF MM5024 HA5024 250N BF180 dp104

    RO3010

    Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g a336-678-5570 EDS-104641

    marking c14a

    Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
    Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2066Z 11b/g EDS-104641 SZM-2066Z"

    SzM2166

    Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238
    Text: Advanced Information Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs


    Original     		PDF SZM-2166Z 11b/g EDS-105683 SZM2166Z" SzM2166 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238

    1415 ic

    Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and


    OCR Scan     		PDF 0093X2 G-200 1415 ic 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ E 20080* 25 Watts, 1.6-1.7 GHz RF Power Transistor Description The 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP


    OCR Scan     		PDF

    TIC55

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20193 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor D escription The 20193 is a class AB, NPN com m on em itter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minim um output power and may be used for both CW and PEP


    OCR Scan     		PDF

    npn k3n

    Abstract: k3n transistor DS30059 MMBT3904 MMBT3906 marking K3N
    Text: MMBT3906 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW


    OCR Scan     		PDF MMBT3906 MMBT3904) OT-23, MIL-STD-202, OT-23 -10mA, 100MHz -100nA, npn k3n k3n transistor DS30059 MMBT3904 MMBT3906 marking K3N

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C


    OCR Scan     		PDF EN2471A 2SC4106 247IA 00V/7A 1000m 900mA 800mA 600mA H707b

    BT3906

    Abstract: BT3904
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT3906 T3904) OT-23 IL-STD-202, 100MHz -10mA, 300ns, DS30059 BT3906 BT3904