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    TRANSISTOR R48 Search Results

    TRANSISTOR R48 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 817

    Abstract: TRANSISTOR R46 2SC4095 transistor r47
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    Original     		PDF 2SC4095 2SC4095 nec 817 TRANSISTOR R46 transistor r47

    NEC 7924

    Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
    Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1


    Original     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 NEC 7924 ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538

    2SC5013

    Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5013 2SC5013-T1 2SC5013 2SC5013-T1 transistor r47 MARKINGR46 marking R46

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		PDF LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK

    Untitled

    Abstract: No abstract text available
    Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays


    Original     		PDF MAX17102 450mA MAX17102

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 1185fd

    LT1120A

    Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT

    Untitled

    Abstract: No abstract text available
    Text: MP3393 8-String Step-Up White LED Driver with External Transistor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3393 is a step-up controller with 8 current channel sources designed to power WLED backlights for large LCD panels. • • •


    Original     		PDF MP3393 MP3393 202mV MP3393â SOIC28

    Untitled

    Abstract: No abstract text available
    Text: 19-4451; Rev 0; 2/09 MAX17094 Evaluation Kit Features The MAX17094 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		PDF MAX17094 250mA 300mA MAX17094

    Untitled

    Abstract: No abstract text available
    Text: 19-4706; Rev 0; 7/09 MAX17100 Evaluation Kit The MAX17100 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		PDF MAX17100 500mA regulato00 MAX17100

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD

    Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs

    Abstract: No abstract text available
    Text: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE


    Original     		PDF

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


    Original     		PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


    Original     		PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    transistor NEC D 586

    Abstract: TRANSISTOR R46
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC4095 2SC4095 VP15-00-1 IR30-00-1 WS60-00-1 transistor NEC D 586 TRANSISTOR R46

    NEC IC D 553 C

    Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC4095 2SC4095 NEC IC D 553 C nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    TRANSISTOR R48

    Abstract: PA611-01-01
    Text: I I I DWG No. I PA611-01-01 | | LEDC10-12-R48 This iw .^controlled copy when without Authorized Mark on the printed drawing Verification of the latest version shall be conducted by PLM system. SPECIFICATIONS - —_ MODEL ITEMS ' -— — - * 1 A


    OCR Scan     		PDF PA611-01-01 LEDC10-12-R48 150mA 350mA 480mA PA611 LEDC10â TRANSISTOR R48 PA611-01-01