TRANSISTOR RJH 30 Search Results

TRANSISTOR RJH 30 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR RJH 30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BDY72 Silicon NPN Power Transistor DESCRIPTION • Contunuous Collector Current-lc= 3A • Collector Power Dissipation: Pc= 25W @TC= 25°C	Original	BDY72 100mA;	PDF
Contextual Info: 5V Linear Controller/Driver Description The CS-8128 contains all the necessary control circuitry to implement a 5V lin ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS-8128 with a TIP42	OCR Scan	CS-8128 TIP42 500mA, 350mV 500mA CS-81289 CS-8128N8 CS-8128D8	PDF
acrian RF POWER TRANSISTOR Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1 Contextual Info: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast	OCR Scan	T-33-13 VTV-300 F627-8 acrian RF POWER TRANSISTOR TU S1 3003 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8-Q1	PDF
Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm BCW67A = DA BCW67B = DB BCW67C » DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR	OCR Scan	BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H 67series BCW67A,	PDF
buz53a Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ53A_ bbS3T31 DD14710 T-39-11 LLS3T31 BUZ53A 0Dm71b buz53a	PDF
Contextual Info: U _ _ — - — - N AUER PHILIPS/DISCRETE OL.E D FowerMOS transistor • bbSBTBl DDlMMSfi 7 ■ " BUZ73 -pT 3 7 _ j May 1987	OCR Scan	BUZ73 bbS3T31 0144b3 BUZ73 T-39-11 S3T31	PDF
cr 406 transistor Abstract: BUZ54 Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	BUZ54 0D14717 T-39-13 bbS3T31 0D14723 cr 406 transistor BUZ54	PDF
BUZ350 Abstract: IY TRANSISTOR BUZ35 at ma hi mvs Contextual Info: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ350 T0218AA; T-39-13 BUZ350 IY TRANSISTOR BUZ35 at ma hi mvs	PDF
transistor RJH 30 Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750	OCR Scan	QM75TX-HB E80276 E80271 11-M4 transistor RJH 30	PDF
QD144 Contextual Info: PowerM OS transistor_ _ BU Z76A _ N AMER PHILIPS/DISCRETE ObE D U bb53131 001M4ab 1 • r - ^ r - n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bb53131 001M4ab BUZ76A_ bhS3T31 0D144TQ T-39-11. BUZ76A T-39-11 bbS3T31 QD144	PDF
BUZ76 Contextual Info: _PnwerMOS transistor_ BUZ76 N AMER PHILIPS/DISCRETE OLE D • bbSBTBl 0D1447T 4 ■ 1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ76 0D1447T BUZ76_ T-39-11 BUZ76	PDF
BC 104k capacitor Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30 Contextual Info: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV	OCR Scan	VA2713 75MHz 100MHz VA2713 20KHz 50MHz. 30MHz 30MHz. 10KHz 100KHZ BC 104k capacitor 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30	PDF
Contextual Info: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ80 001454E BUZ80_ bbS3T31 T-39-11	PDF
BUZ21 Contextual Info: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUZ21 BUZ21_ 00144ES T-39-11 Y-39-11 BUZ21	PDF

TC701 Abstract: transistor RJH 30 nokia production line ausi die attach Contextual Info: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004	Original	FIN-00045, TC701 transistor RJH 30 nokia production line ausi die attach	PDF
PS2705-4 Abstract: transistor RJH 30 Contextual Info: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.	OCR Scan	PS2705-1 PS2705-2 PS2705-4 PS2705-1, PS2705-4 transistor RJH 30	PDF
MCA45T Abstract: capacitor philips ll Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll	PDF
NE5217D Contextual Info: Philips Sem iconductors Data C om m unications Products Product specification Postamplifier with link status indicator DESCRIPTION NE/SA5217 PIN CONFIGURATION The NE /S A5217 is a 75M Hz postam plifier system designed to accept low level high-speed signals. These signals are converted	OCR Scan	NE/SA5217 A5217 E5217 NE5212A NE5217 NE5214 AB1432. NE5217D	PDF
SOT123 Package Abstract: SOT123 BLF244 International Power Sources SOT-123 Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability	OCR Scan	BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123	PDF
CM300DY-24E Abstract: L120A BP107 fjl diode AL6345-25.0.391-00 Contextual Info: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD	OCR Scan	7ET4b21 CM300DY-24E BP107, Amperes/1200 CM300DY-24 E-7-1800 CM300DY-24E L120A BP107 fjl diode AL6345-25.0.391-00	PDF
TRANSISTOR G13 Abstract: C1u TRANSISTOR mrf154 amplifier MRF157 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts	OCR Scan	MRF157 TRANSISTOR G13 C1u TRANSISTOR mrf154 amplifier	PDF
Contextual Info: 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42	OCR Scan	CS8128 TIP42 500mA, 350mV 500mA inc80 MS-001	PDF
k3017 Abstract: 2SK3017 Contextual Info: TO SH IBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance	OCR Scan	2SK3017 L-12-) k3017 2SK3017	PDF
Contextual Info: 5V Linear Controller/Driver Description The CS8127 contains all the necessary control circuitry to im plem en t a 5V lin ear regulator. A n external pass device is u se d to p ro d u ce su p erio r perform ance co m pared to conventional m onolithic regulators. The CS8127 w ith a TIP42	OCR Scan	CS8127 TIP42 500mA, 350mV 500mA MS-001 MS-012 CS8127YN8	PDF

TRANSISTOR RJH 30 Search Results

TRANSISTOR RJH 30 Result Highlights (5)

TRANSISTOR RJH 30 Datasheets Context Search

acrian RF POWER TRANSISTOR

buz53a

cr 406 transistor

BUZ350

transistor RJH 30

QD144

BUZ76

BC 104k capacitor

BUZ21

TC701

PS2705-4

MCA45T

NE5217D

SOT123 Package

CM300DY-24E

TRANSISTOR G13

k3017