TRANSISTOR S 1014 Search Results

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

907 TRANSISTOR smd

Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
Contextual Info: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

HV400

Abstract: 1030 mhz interrogator 1030 PULSED
Contextual Info: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor

HVV1011-1000L

Abstract: transistor 1000W 1000w power supply 1030 PULSED
Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor

diode gp 429

Abstract: HVV1011-1000L interrogator transistor 1000W
Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor

diode AR s1 56

Abstract: 264NC DM8401
Contextual Info: S DM8401 J UNE 21, 2005 ver1.3 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V -5.3A 20 @ V G S = 10V 30V

LT 6242

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 TENT A T I V E DA T A PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in m m The T O S H I B A TLP624, -2 and -4 consist of a g a l l i u m a r s e n i d e infrared emitting diode op t i c a l l y coupled to a photo-transistor.

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR T L P 6 2 1 , - 2 , - 4 Unit in mm PROGRAMMABLE CONTROLLER AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in

Contextual Info: SGS-THOMSON STE53NA50 RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STE53NA50 . . . . . . . . . dss 500 V R d S (o ii) < 0.085 Q. Id 53 A TYPICAL Ros(on) =0.075 £2 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY

TLP555

Abstract: TLP558 1S1588 E67349
Contextual Info: TOSHIBA TLP558 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP558 ISOLATED BUS DRIVER HIGH SPEED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP558 consists of a G a A iA s lig h t em itting diode and

m5009

Abstract: pnp high emitter base voltage 15 volt 2N5009 2N5330 2N5006 2N5007 2N5008 E131 E134 SFT8200
Contextual Info: SOLID STATE DEVICES INC |fl3bb011 0002130 h | 1EE D T - ^3 -X3 2N5007 AND 2 N5009 10 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE s S a S I E r l l 14830 Valley View Avenue La Mirada, California 90638

Contextual Info: DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst 32 s on/18 s off x 48 repeated every 24ms.

Contextual Info: T O SH IB A TLP559 TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G a A M s IRED & PHOTO IC LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The T O S H IB A TLP559 consists of a G aA€A s high-output lig h t

p733

Abstract: toshiba TLP tip733
Contextual Info: TOSHIBA TLP 733JL P 734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P733 TI P73ZL OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a gallium arsenide infrared em itting diode in a

Contextual Info: TOSHIBA TLP624,TLP624-2,TLP624-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP624, TLP624-2, TLP624-4 PRO GRAM M ABLE CONTROLLERS AC / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP624, -2 and -4 consist of a g alliu m arsenide infrared em itting diode op tically coupled to a photo-transistor.

toshiba TLP

Abstract: ic vrm
Contextual Info: TOSHIBA TLP 733JL P 734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P 7 3 3 TI P73ZL OFFICE MACHINE. U n it in mm HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a gallium arsenide infrared em itting diode in a

da qz transistor

Abstract: transistor qz n channel mosfet 500 mA 400 v N and P MOSFET
Contextual Info: A dvanced I / I 1 lia Z S S / L in e a r ALD1107/ALD1117 D e v ic e s , I n c . QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance­ ment mode matched MOSFET transistor arrays intended fora broad range

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

TLP555

Abstract: 1S1588 TLP558 TOSHIBA TLP558 E67349
Contextual Info: TO SH IBA TLP558 TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO IC TLP558 ISOLATED BUS DRIVER HIGH SPEED LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP558 consists of a GaA€As ligh t em itting diode and