TRANSISTOR S 2212 Search Results

transistor 626

Abstract: BU626A transistor d 2213 Q68000-A4984
Contextual Info: 2SC D • 02 35b G S GDOMflHi S IE Û & BU 626 A NPN Silicon Power Transistor '-3 3 -/ 3 SIEM EN S A K T IE N G E S E L L S C H A F BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors Medium Power Transistor Motor relay or Solenoid drive I 2SD 2212 / 2SD 2143 / 2SD1866 / 2SD 1764 •F e a tu re s 1) 2) 3) 4 ) Built-in Strong Built-in Built-in •A b s o lu te maximum ratings (T a = 2 5 't )

Contextual Info: ISOCOM COMPONENTS LTD 45E D • HfiûbSlO 0DÜD5Ô2 T « I S O | S F H 60 0-0X, S F H 60 0-1X, S F H 60 0 -2 X, S F H 6 0 0-3 X, S F H 600-4 X *iti ii; j. ¡jij • I. H l’iif '1'>•?• SM *-*’. | ISOCOM Hi OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

KD224503HB

Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
Contextual Info: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES

2sd1764

Abstract: 2SD1856 transistors 2sd 2500
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors I Medium Power Transistor Motor relay or Solenoid drive 2SD 2212 / 2SD 2143 / 2SD 1866 / 2SD 1764 •F e a tu re s 1 ) Built-in zener diode between coHector and base. 2 ) Strong protection against reverse surges due to low loads.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistor BCW72LT1 NPN Silicon COLLECTOR 3 % 2 EMITTER MAXIMUM RATINGS 2 C A S E 3 18-0 8, S T Y L E 6 Rating C ollector-E m itter Voltage Sym bol Value Unit VCEO 45 Vdc C ollector-Base Voltage v CBO

Contextual Info: 45E D ISOCOM COMPONENTS LTD • MflfibSlO □□□□274 T « I S O . IS 204X I»},.lu,■K-'n»."s *«»»■■g».$'ji 'r * v H » ^ ^ ^ ^ I* .i£ ï OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The IS 204X is a optically coupled isolator consisting

transistor tt 2206

Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

MPS901

Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.

Contextual Info: 45E D ISOCOM COMPONENTS LTD L X >!• 'Û S ■ MfifibSlO 0 0 GD570 2 m i S O IS-201X, IS-202X, IS-203X, Hn, ¡-a"" f i 11 ft *1 ' Ml1;'1’!!1' ‘i i W ' M “» ,Vi-i! H f M ^ W "’WÜ-tiENil 'li 11 »*»■ OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

Contextual Info: SRA2212M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion OUT • I nt erface circuit and driver circuit applicat ion Features IN • Wit h built- in bias resist or • Sim plify circuit design • Reduce a quant it y of part s and

rogers* 4403

Abstract: rogers 4403 HMC454 HMC454ST89
Contextual Info: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain

Contextual Info: I l4flflb51D 0 0 0 0 2 ^ 0 û • ISO MSE D IS OC OM C O M P O N E N T S LTD IS 205X, IS 206X~ '•»t.ïSïS <¿5 ism oM OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN MM DESCRIPTION The IS205X, IS206X are optically coupled isolators

D-42

Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Contextual Info: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

IC 74032

Abstract: IC 7403 datasheet IC 7403 2SA1745 CPH6516 ITR10434 ITR10435 ITR10436 ITR10437 ITR10438
Contextual Info: Ordering number : ENN7403 CPH6516 PNP Epitaxial Planar Silicon Composite Transistor CPH6516 Low-Frequency General-Purpose Amplifier Applications • unit : mm 2212 [CPH6516] B2 5 0.2 4 0.6 6 0.05 Electrical Connection C1 0.15 2.9 2.8 • Composite type with 2 transistors and in the CPH

CPH6517

Abstract: marking 3B 7385 2SC4555 ENN7385 ITR10442 ITR10443 ITR10444 ITR10445 ITR10446
Contextual Info: Ordering number : ENN7385 CPH6517 NPN Epitaxial Planar Silicon Composite Transistor CPH6517 Low-Frequency General-Purpose Amplifier Applications • unit : mm 2212 [CPH6517] B2 5 0.05 1 E2 2 3 0.95 0.7 0.9 TR2 TR1 0.4 Top view B1 E1 0.2 4 0.6 6 Electrical Connection

BP107

Abstract: ID221205 Scans-007799
Contextual Info: POWEREX INC m 3=JE D t /a ta c • 7 2 1 4 b 2 1 0DG47Ô7 fi mP RX _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ID 221205

1I101

Abstract: 0to125 powerex nd
Contextual Info: P O UJ E RE X 3=1E D INC • 7 2 ^ 2 1 mmwEX. OGGMTD? 3 *P R X IQ 221205 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S. A. 428 A venue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ' f-Z l'Z L Chopper IGBTMOD

Application Hint 20

Abstract: direct pm modulation circuit SSB Modulator iqdc Siemens Halbleiter
Contextual Info: ICs for Communications Mixer DC - 1.6GHz and Vector Modulator with AGC 1.4-1.6GHz PMB 2212 Specification 05.99 GLWLRQ  3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUD‰H   0QFKHQ Siemens AG 1995. All Rights Reserved.

Contextual Info: <WEHEX KD221203 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U dl DdrHflQtOfl Transistor Module 30 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4

ic 7475

Abstract: 2SA1813 CPH6520 ITR10596 ITR10597 ITR10598 ITR10599 marking 3G VEBO-15V
Contextual Info: Ordering number : ENN7475 CPH6520 PNP Epitaxial Planar Silicon Composite Transistor CPH6520 Low-Frequency General-Purpose Amplifier, Drivers Applications • • • unit : mm 2212 [CPH6520] 5 4 0.6 6 0.2 0.15 2.9 0.05 2.8 • Composite type with 2 transistors contained in the