TRANSISTOR S9014 Search Results

TRANSISTOR S9014 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR S9014 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S9014M Abstract: S9015M Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M S9014M S9015M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M -10mA 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
S9015 Abstract: S9015M S9014M Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M S9015 S9015M S9014M	PDF
S9014c Abstract: transistor S9014C PSS9014C s9014-c Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PSS9014C NPN general purpose transistor Product specification 2002 Mar 15 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C FEATURES PINNING • High power dissipation: 500 mW	Original	M3D186 PSS9014C MAM279 SCA74 613514/01/pp8 S9014c transistor S9014C PSS9014C s9014-c	PDF
s9014c Abstract: transistor s9014c PSS9014C s9014-c s9014 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Mar 15 2002 Sep 20 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES	Original	M3D186 PSS9014C MAM279 SCA74 613514/02/pp8 s9014c transistor s9014c PSS9014C s9014-c s9014	PDF
s9014c Abstract: SC-43A PSS9014C S9014 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES	Original	M3D186 PSS9014C MAM279 SCA76 R75/03/pp7 s9014c SC-43A PSS9014C S9014	PDF
Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23	Original	S9015LT1 S9014LT1 -100mA OT-23 -100mA -10mA 062in 300uS S9015LT1	PDF
Contextual Info: tgr \| « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity	OCR Scan	S9015 S9014 450mW -100uA -100mA -10mA	PDF
Contextual Info: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW	OCR Scan	S9014S S9015S 10OmA 225mW 100uA 100mA 10VIe 300uS,	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. S9015S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY,LOW NOISE AMPLIFIER * Complement to S9014S * Collector C urrent: Ic=-100mA * Collector-Emitter Voltage: Vceo=-45V. ABSOLUTE MAXIMUM RATINGS a t TandHZ5°C	OCR Scan	S9015S S9014S -100mA -100uA -100mA -10mA 062ii 300uS	PDF
S9014L Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW	Original	S9014LT1 S9015LT1 100mA 225mW OT-23 100mA 062in 300uS S9014LT1 S9014L sot-23 MARKING O7 S9014LT1-L	PDF
s9015 SOT23 transistor Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION	Original	S9015 S9014. OT-23 BL/SSSTC084 s9015 SOT23 transistor S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23	PDF
S9015 SOT-23 Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015	PDF
transistor SOT23 J6 Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6	PDF
S9015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz	PDF
transistor S9014 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz transistor S9014	PDF
transistor SOT23 J6 Abstract: Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION	Original	S9014 S9015. OT-23 BL/SSSTC083 transistor SOT23 J6 Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23	PDF

TRANSISTOR S9014 Search Results

TRANSISTOR S9014 Result Highlights (5)

TRANSISTOR S9014 Datasheets Context Search

S9014M

S9015

S9014c

s9014c

s9014c

S9014L

s9015 SOT23 transistor

S9015 SOT-23

transistor SOT23 J6

S9015

transistor S9014

transistor SOT23 J6