TRANSISTOR S9015 Search Results

TRANSISTOR S9015 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR S9015 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S9014M Abstract: S9015M Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M S9014M S9015M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M -10mA 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP	Original	WBFBP-03B S9015M WBFBP-03B S9014M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
S9015 Abstract: S9015M S9014M Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M S9015 S9015M S9014M	PDF
S9015B Abstract: PSS9014 noise Philips TO-92 MARKING CODE W PSS9014 PSS9015B S9015* transistor s9015 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9015B PNP general purpose transistor Product specification 2002 Sep 20 Philips Semiconductors Product specification PNP general purpose transistor PSS9015B FEATURES PINNING • Low collector capacitance.	Original	M3D186 PSS9015B PSS9014. MSB033 S9015B SCA74 613514/01/pp8 S9015B PSS9014 noise Philips TO-92 MARKING CODE W PSS9014 PSS9015B S9015* transistor s9015	PDF
S9015B Abstract: S9015 PSS9014 PSS9015B SC-43A PSS9014 noise Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9015B PNP general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification PNP general purpose transistor PSS9015B FEATURES	Original	M3D186 PSS9015B PSS9014. MSB033 S9015B SCA76 R75/02/pp7 S9015B S9015 PSS9014 PSS9015B SC-43A PSS9014 noise	PDF
Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23	Original	S9015LT1 S9014LT1 -100mA OT-23 -100mA -10mA 062in 300uS S9015LT1	PDF
Contextual Info: tgr \| « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity	OCR Scan	S9015 S9014 450mW -100uA -100mA -10mA	PDF
Contextual Info: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW	OCR Scan	S9014S S9015S 10OmA 225mW 100uA 100mA 10VIe 300uS,	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF
S9015T Contextual Info: S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. PC=0.45W	Original	S9015T S9015T-A S9015T-B S9015T-C S9015T-D 23-Aug-2012 -10mA, 30MHz S9015T	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR PNP SOT–323 FEATURES  Small Surface Mount Package  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9015W -100mA, -10mA 30MHz	PDF
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. S9015S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY,LOW NOISE AMPLIFIER * Complement to S9014S * Collector C urrent: Ic=-100mA * Collector-Emitter Voltage: Vceo=-45V. ABSOLUTE MAXIMUM RATINGS a t TandHZ5°C	OCR Scan	S9015S S9014S -100mA -100uA -100mA -10mA 062ii 300uS	PDF
S9014L Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW	Original	S9014LT1 S9015LT1 100mA 225mW OT-23 100mA 062in 300uS S9014LT1 S9014L sot-23 MARKING O7 S9014LT1-L	PDF
BCW60B Abstract: BCW60BLT1 S9014LT1 S9015LT1 Contextual Info: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25	Original	BCW60BLT1 S9015LT1 100mA 225mW 100mA 062in BCW60BLT1 S9014LT1 BCW60B BCW60B S9014LT1 S9015LT1	PDF
s9015 SOT23 transistor Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION	Original	S9015 S9014. OT-23 BL/SSSTC084 s9015 SOT23 transistor S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23	PDF
S9015LT1 Contextual Info: 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25	Original	2SD601LT1 S9015LT1 100mA 225mW CHARAC135 100mA 062in 300uS 2SD601LT1 S9015LT1	PDF
S9015 SOT-23 Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015	PDF
transistor SOT23 J6 Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6	PDF
S9015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz	PDF

TRANSISTOR S9015 Search Results

TRANSISTOR S9015 Result Highlights (5)

TRANSISTOR S9015 Datasheets Context Search

S9014M

S9015

S9015B

S9015B

S9015T

S9014L

BCW60B

s9015 SOT23 transistor

S9015LT1

S9015 SOT-23

transistor SOT23 J6

S9015