TRANSISTOR SE 431 Search Results

RIL3N

Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

transistor SE 431

Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem en t to B D 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a se V o lta g e Sym bol : BD176 Rating Unit

2SB424

Abstract: 2SD234 2SD235
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC1116A

Abstract: transistor 431A transistor tl 431A h a 431a transistor 2SC1619A 2SA119 2SC1008A 2SC16 2SC1517A SI 7300
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

bly91a

Contextual Info: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

transistor SE 431

Abstract: QM150DY-2H transistor 431 N QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • lc • V cex • hFE Collector c u rre n t. 150A Collector-em itter vo lta g e . 1000V DC current g a in . 75

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

BLY88

Contextual Info: N AMER PHILIPS/DISCRETE b'îE D • ^53^31 002=11^2 SO? ■ APX BLY88Ü/01 A V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

transistor k 3728

Abstract: BLY90 A-04 TRIMMER capacitor 160 pF 270j capacitor SOT-55 philips Trimmer 60 pf
Contextual Info: — - ; — 5 - : _ N AMER P H IL IP S /D IS C R E T E 86D 0 1 92 8 . . — _ l i _ _ OLE I D •

SOT122A

Abstract: 7Z78437
Contextual Info: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to

D40 transistor

Abstract: D40A ct d40b D40B D40C D41B D41A D41C e100n
Contextual Info: v.'%% mm Êm b3E D GILDAY TE CH NI CAL LAMP 15 MIN 2,3 +/- .25 r COLLECTOR^? r gré.» -.22 MIN " 0 4 . 0 +/- .25 ± fenili COLLECTOR ¿¿-1 33 2 .5 4 f\6 t IGTL 3^77 ^40 0000 431 O^ö 5 +/• .25 1.5 - Sfili 0 $ +/- .25 1 M AX" 1; M AX Phototransistors Emitter to

BLX95

Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
Contextual Info: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

BFS22A

Abstract: J22 transistor 27Z60 BFS22
Contextual Info: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n ­

BFS23A

Abstract: 4312 020 36640
Contextual Info: b5E D PHILIPS INTERNATIONAL m 711002b Ü0b2b27 731 BFS23A ¡PHIN X V.H.F. POWER TRANSISTOR N-P-N epitaxial Planartransistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage o f 28 V. The transistor is resistance stabilized. Every tran­

BLX95

Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm
Contextual Info: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is

D02fc

Abstract: ITE13F06
Contextual Info: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for

J119 transistor

Abstract: enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104
Contextual Info: Ph » |P ^ « n jicon ducto» ^ ^ bfc,53^ 3 1 D DB^ fiM b M APX Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN C O N F IG U R A T IO N • High pow er gain • Low noise figure • G o o d therm al stability

A 673 C2 transistor

Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Contextual Info: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY93A

Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Contextual Info: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

BLY87A

Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
Contextual Info: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y

BFS22A

Contextual Info: PHILIPS bSE IN TE RNA TI ONA L T> m 711002b O D b S b n bbS I PHIN B FS 2 2 A V.H.F. POW ER TRAN SISTO R N-P-N epitaxial planar transistor intended fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran­

transistor itt 975

Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz

Contextual Info: LIN Doc #; 1431 WFMTY M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f P rogrammable R eference I n n o v a t i o n P r o d u c t i o n D ata DESCRIPTION T he LX1431 is a n adjustable sh u n t voltage regulator featuring 100mA sink capability, a