TRANSISTOR SH 550 Search Results

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ HPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power m anagement application of notebook com puters, and Li-ion battery application.

2SK1746

Contextual Info: T O SH IB A ^□^7250 GGE334b 57T TO SH IBA FIELD EFFECT TRANSISTOR 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. U n it in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low D rain-Source ON R esistance

2103F

Contextual Info: T O SH IB A RN2101 F~RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in B ias Resistors •

Contextual Info: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure

Contextual Info: T O SH IB A TLP631,TLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS U nit in mm AC/DC-INPUT MODULE SOLID STATE RELAY 6 5 4 1 2 3 T1 TT IT3 The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a

10ID

Abstract: 2SC2714
Contextual Info: TO SH IBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 + • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)

2SC4915

Contextual Info: 2SC4915 TO SH IBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

Contextual Info: T O SH IB A 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC1923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) Low Noise Figure

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK2173) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)

2SC4215

Contextual Info: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)

Contextual Info: 2SC4915 TOSHIBA 2SC4915 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM , RF, M IX , IF AM PLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)

transistor Sh 550

Abstract: transistor 2sk 2232
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 DATA SILICON N CHANNEL MOS TYPE L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

transistor Sh 550

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 SILICON N CHANNEL MOS TYPE DATA L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

Contextual Info: TO SH IB A 2SC4215 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4215 HIGH FREQUENCY AM PLIFIER APPLICATIO NS Unit in mm FM, RF, MIX, IF AM PLIFIER APPLICATIO NS 2.1 ± 0.1 1 .2 5 t 0.1 • Sm all Reverse Transfer Capacitance : Cre = 0.55pF Typ.

2SK1746

Abstract: 2SK174
Contextual Info: TOSHIBA ^□^7250 TO SH IBA FIELD EFFECT TRANSISTOR GGE334b 57T 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2S K 1746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • • • •

transistor Sh 550

Contextual Info: TO SH IB A 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR i <v ; k SILICON N CHANNEL MOS TYPE L2-tt-M O SV • m. 1 1 7 3 w HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS

Contextual Info: GT80J101 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE G T 8 0 J 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High. Input Impedance High Speed Low Saturation Voltage Enhancement-Mode t f= 0.40//S Max. VCE(sat) = 3-5V (Max->

transistor Sh 550

Contextual Info: T O SH IB A 2SK2232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RßS (ON) —36mfl (Typ.)

NEC Ga FET marking L

Contextual Info: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance

P4015

Abstract: MP4015
Contextual Info: MP4015 TO SH IBA T O S H IB A POW ER TRANSISTOR M O D U L E SILICON NPN TRIPLE DIFFUSED TYPE D A R LIN G T O N P OW ER TR ANSISTOR 4 IN 1 M P4 0 1 5 HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE. INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.