TRANSISTOR SMD 183 Search Results

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

TRANSISTOR SMD CODE B7

Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Contextual Info: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.

SOT-23

Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

transistor smd ALG

Abstract: transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg
Contextual Info: • bbSBIBl OOSSAbb blfl ■ APX N AMER PHILIPS/DISCRETE PM BT3906 b?E D 7V SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature SMD plastic envelope intended for surface mounted applications. The PMBT3906 is primarily intended for use in telephony and professional communication equipment.

PBSS4580PA

Contextual Info: PBSS4580PA 80 V, 5.6 A NPN low VCEsat BISS transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4580PA 80 V, 5.6 A NPN low VCEsat BISS transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV9540Z

Abstract: PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC
Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

SOt23-3 footprint wave soldering

Contextual Info: PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N08L07

Abstract: 2N08L07 POWER 2n08l07 marking
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow V DS 75 V R DS on ,max (SMD version) 6.8 mW ID 80 A • 175°C operating temperature

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

SMD CODE TRANSISTOR JA

Abstract: MAX667 MAX667MJA/883B 5962-9212604MPA smd ja 1.B smd transistor 9v smd transistor
Contextual Info: SCOPE: +5V/Programmable Low-Dropout Voltage Regulator Device Type 01 Generic Number MAX667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 Case Outline Package Code MAXIM SMD JA P

9v smd transistor

Abstract: SMD CODE TRANSISTOR JA
Contextual Info: SCOPE: +5V/Programmable Low-Dropout Voltage Regulator Device Type 01 Generic Number MAX667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 Case Outline Package Code MAXIM SMD JA P

Contextual Info: ISO-9001 CERTIFIED BY DSCC DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/184 M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

37ie

Abstract: RESISTOR POTENTIOMETER APEX pa21
Contextual Info: ISO-9001 CERTIFIED BY DSCC DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/184 M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

APEX pa21

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

Contextual Info: ISO-9001 CERTIFIED BY DSCC DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/184 M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

APEX pa21

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

PA74

Abstract: APEX pa21 MSK182 MSK183 MSK184 PA21
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers

M1207

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 182/183/ 184 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers