TRANSISTOR SMD MOSFET DRIVER Search Results
TRANSISTOR SMD MOSFET DRIVER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TCK424G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
![]() |
||
TCK425G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
![]() |
||
TCK423G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
![]() |
||
TCK420G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
![]() |
||
TCK422G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
![]() |
TRANSISTOR SMD MOSFET DRIVER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: NX7002AK 60 V, single N-channel Trench MOSFET 13 December 2012 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
NX7002AK O-236AB) | |
NX7002AK
Abstract: smd code marking sot23 SMD MARKING QG 6 PIN
|
Original |
NX7002AK O-236AB) NX7002AK smd code marking sot23 SMD MARKING QG 6 PIN | |
Contextual Info: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMV20XNE O-236AB) | |
placeholder for manufacturing site codeContextual Info: PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMV50UPE O-236AB) placeholder for manufacturing site code | |
SOt23-3 footprint wave soldering
Abstract: MARKING TR SOT23-3 P MOSFET
|
Original |
PMV185XN O-236AB) SOt23-3 footprint wave soldering MARKING TR SOT23-3 P MOSFET | |
TRANSISTOR K 135 mosfetContextual Info: PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMT200EN OT223 SC-73) TRANSISTOR K 135 mosfet | |
Contextual Info: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 8 August 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
NX7002BK O-236AB) | |
Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
BSS138AKA O-236AB) AEC-Q101 | |
Contextual Info: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMV170UN O-236AB) | |
Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
BSS138AKA O-236AB) AEC-Q101 | |
Contextual Info: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
NX7002BK O-236AB) | |
Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV250EPEA O-236AB) AEC-Q101 | |
PMN42XPEAContextual Info: SO T4 57 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMN42XPEA OT457 SC-74) AEC-Q101 PMN42XPEA | |
Contextual Info: SO T2 3 NX7002AK 60 V, single N-channel Trench MOSFET 13 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
NX7002AK O-236AB) | |
|
|||
Contextual Info: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV48XPA O-236AB) AEC-Q101 | |
Contextual Info: SO T2 3 PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV50XP O-236AB) | |
Contextual Info: NXS7002AK 60 V, single N-channel Trench MOSFET 25 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
NXS7002AK O-236AB) | |
Contextual Info: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV65XPE O-236AB) | |
Contextual Info: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV45EN2 O-236AB) | |
Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMV250EPEA O-236AB) AEC-Q101 | |
Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV250EPEA O-236AB) AEC-Q101 | |
NX3020NAKContextual Info: NX3020NAK 30 V, single N-channel Trench MOSFET 2 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
NX3020NAK O-236AB) NX3020NAK | |
Contextual Info: PMT760EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
Original |
PMT760EN OT223 SC-73) | |
Contextual Info: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
Original |
PMV130ENEA O-236AB) AEC-Q101 |