TRANSISTOR SMD N 03A Search Results

2N7002 NXP MARKING

Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Contextual Info: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

Contextual Info: PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

03AF6

Contextual Info: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

nxp 544

Abstract: FET marking codes
Contextual Info: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

MARKING CODE 16 transistor sot23

Abstract: smd code marking HD SOT23
Contextual Info: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

marking code m4 SMD Transistor

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
Contextual Info: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

nxp pmgd780sn

Abstract: PMGD780SN
Contextual Info: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

FET marking codes

Contextual Info: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

smd transistor ja

Contextual Info: 83B PMZB420UN SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B PMZB290UN SO T8 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

transistor SMD ee

Contextual Info: Technical Data Sheet 1206 Package Chip Photo Darlington with lnner lens PDT11-21C/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Package in 8mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.

transistor mps 13

Abstract: 75MHZ ICS83032AGI ICS83032I PN9500 3rd Overtone crystal equivalent circuit
Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS83032I 75MHZ, 3 OVERTONE OSCILLATOR W/DUAL LVCMOS/LVTTL OUTPUTS RD GENERAL DESCRIPTION FEATURES The ICS83032I is a SAS/SATA dual output LVCMOS/LVTTL oscillator and a member of the HiPerClockS HiperClocks™ family of high performance devices from ICS. The ICS83032I uses a 3rd overtone crystal to provide a reference frequency

SMD TRANSISTOR MARKING 6B

Abstract: sas smd transistor 3rd Overtone crystal equivalent circuit PN9500 smd dual transistor f1 75MHZ ICS83032AGI ICS83032AGIT ICS83032I dual transistor 6 pin SMD f1
Contextual Info: DATA SHEET PRELIMINARY ICS83032I Integrated ICS83032I 75MHZ, 3RD OVERTONE OSCILLATOR W/DUAL RD Circuit 75MH Z, 3 OVERTONE OSCILLATOR Systems, Inc. LVCMOS/LVTTL OUTPUTS W/DUAL LVCMOS/LVTTL OUTPUTS GENERAL DESCRIPTION FEATURES The ICS83032I is a SAS/SATA dual output

BUK2114

Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
Contextual Info: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A

TEA1620

Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
Contextual Info: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of

PD55015-E

Abstract: PD55015 AN1294 JESD97 PD55015S PD55015S-E PD55015STR-E PD55015TR-E
Contextual Info: PD55015-E PD55015S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 15W with 14dB gain @ 500MHz / 12.5V ■ New RF plastic package

S2185

Abstract: PD55015-E trimmer 3-30 pf
Contextual Info: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead

PD55015-E

Abstract: PD55015E 12596 PD55015 AN1294 J-STD-020B PD55015S PD55015S-E PD55015STR-E PD55015TR-E
Contextual Info: PD55015-E PD55015S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF

Contextual Info: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead

Diode SMD ED 98

Abstract: elco 330 u RSM-200 sw1 spdt Telefunken 102 M SE smd zener diode code 8M LD11 LD12 MPC821
Contextual Info: Freescale Semiconductor, Inc. Motorola Semiconductor Israel Ltd. MOTOROLA COMMUNICATIONS & ADVANCED Freescale Semiconductor, Inc. CONSUMER TECHNOLOGY GROUP O IC EM R, O CT U ND C IN . MPC821 APPLICATION S E DEVELOPMENT SYSTEM L A C ES ADS E FR USER’S