TRANSISTOR SMD T4 Search Results

PBSS4350D

Abstract: PBSS5350D
Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Contextual Info: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.

1N916

Abstract: PZT3904 smd transistor 3t
Contextual Info: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.

PMN42XPEA

Contextual Info: SO T4 57 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 57 PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 57 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 57 PMN70XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BCX18R

Abstract: transistor SMD t4 SMD TRANSISTOR MARKING 28 TRANSISTOR T4 BCX17R
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BCX17R BCX18R SOT-23 Formed SMD Package MARKING BCX17R = T4 BCX18R = T5 ABSOLUTE MAXIMUM RATINGS Ta = 25ºC unless specified otherwise

nxp 544

Abstract: FET marking codes
Contextual Info: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

FET marking codes

Contextual Info: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

transistor smd code marking nc

Contextual Info: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

marking code AC

Abstract: marking code A.C NXP SMD DIODE MARKING CODE T4
Contextual Info: SO T4 16 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

5s103

Contextual Info: SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SC-75

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

smd code marking ID

Abstract: NXP SMD DIODE MARKING CODE T4 NX3008PBKT
Contextual Info: SO T4 16 NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 57 PMN22XN 30 V, single N-channel Trench MOSFET Rev. 1 — 19 January 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

zy smd transistor

Abstract: transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T
Contextual Info: SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.